Small size, high-brightness fiber-coupled laser modules have always been the ultimate goal that all researchers are pursuing. A high-brightness 525 nm wavelength fiber-coupled system is designed and evaluated. Based on a multichip 2D green laser diode array, fast-axis collimators are set inside the light source, and a beam shaping system that can rearrange the beam and improve the beam quality in both axes is designed. The simulation results indicate that 24 single emitters are coupled into a 50μm / 0.15 NA optical fiber successfully and the output power is 22.55 W. The brightness of 16.25 MW / ( cm2 · sr ) is calculated with fiber coupling efficiency is 97%.
KEYWORDS: Vertical cavity surface emitting lasers, Mirrors, Reflectivity, Resonators, Resistance, Near field diffraction, Transmittance, Lithium, Light sources, High power lasers
For the past years, ArF immersion has been employed as the major lithography tool in the foundry manufacturing to fabricate the patterns of minimum pitch and size. However, for semiconductor scaling beyond N7 the application of EUV lithography is considered to be crucially important to overcome the physical limitation of ArF immersion and to realize even smaller patterns. In the case of ArF photo processes, the best mask size for a specific pitch could be selected with the consideration of optical performances such as NILS, MEEF, etc. In contrast, for the EUV processes the optical and resist stochastic effect should also be taken into account as an important factor in deciding the best mask size. In this paper, we are going to discuss the dose and mask size optimization process for an DRAM contact hole layer with EUV lithography utilizing stochastic simulations; this contains also the stochastic response of the resist. In order to calibrate a predictive stochastic resist model, which is required for this application, measurements of the stochastic resist response are necessary. In addition, the systematic and stochastic errors of CD-SEM measurements have to be estimated. We will compare experimentally obtained NILS and MEEF to simulated results, which are in very good agreement. Also, we show a comparison of experimental and computational analysis of LCDU (Local CD Uniformity).
An all-fiber laser is developed with high peak power, narrow linewidth,linearly polarization, and nanosecond pulse. The single-frequency continuous fiber laser is externally modulated by an electro-optical intensity modulator(EOIM) and a stable pulsed seed laser is obtained with the pulse width of 10 ns and the repetitions rate of 10 kHz. Multistage MOPA structure scheme is adopted.After two stages core-pumped preamplifiers and three stages cladding-pumped amplifiers, the average output power of the laser reach to 21.3W with the peak power of 267 kW. At the highest output power, the signalto-noise ratio of the spectral is greater than 30dB, the polarization extinction ratio is superior 15dB and the Mx2 and My2 factors are 1.28, 1.23, respectively. Stimulated Brillouin scattering (SBS) was not found in the experiment. By increasing the pump power, the average power and peak power can be further improved.
The band structure, density of states, optical properties, effective masses and loss function of AlxGa1−xAs and InyGa1−yAs were performed by the first-principles method within the local density approximation. The calculated direct band gap of the AlAs, Al0.5Ga0.5As, GaAs, In0.5Ga0.5As and InAs were 1.608 eV, 1.34eV, 1.02eV, 0.646eV and 0.316eV at G point, which were direct bandgap semiconductor materials. In addition, dielectric functions, the absorption function, refractive index, loss function and effective mass were analyzed in detail. The effective masses of AlxGa1−xAs and InyGa1−yAs were small, so they have high carrier mobility. These results make them to be promising candidates for future electronics.
GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based highpower blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric fieldinduced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.
Reliability and characterization of 850 nm 50 Gbit/s PAM-4 vertical-cavity surface-emitting lasers (VCSELs) are presented. These VCSELs have demonstrated a threshold current of 0.8 mA and a slope efficiency of 0.95 W/A. The maximum optical output power of 9 mW is achieved at a thermal rollover current of 13.5 mA. The optical power is up to 5 mW and the -3dB bandwidth is in excess of 17 GHz at 25°C and 6 mA bias. The current density and power dissipation density are low to 15 kA/cm2 and 25.5 kJ/cm2 , respectively. The standard deviations of photoluminescence peak wavelength and Fabry-Perot cavity wavelength of epitaxial wafer are 0.75 nm and 2.2 nm, respectively. After 1500 h of the reliability study no degradation or failures of the 22 VCSELs are observed at 80°C in a heating chamber at a bias of 6 mA. Considering high optical absorption of DX center, the impurity doping concentration of 3 pairs of N-DBRs that were adjacent to active region are optimized. The additional SiO2 passivation layer not only can provide moisture resistance but also provide a photon lifetime tuning. The output power increases by optimizing thickness of SiO2 layer reducing power dissipation density. Single thin oxide aperture is employed by slowing down the oxidizing rate and improving temperature during a VCSEL oxidation process to thereby reduce stress concentration of an oxidation. Single thin oxide aperture may limit the -3dB bandwidth, but the modulation characteristics can be improved by adopting advanced modulation techniques such as 4-level pulse amplitude modulation (PAM-4).
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