EXTREME UV LITHOGRAPHY

Compact electron-based extreme ultraviolet source at 13.5 nm

[+] Author Affiliations
A. Egbert, B. Mader, B. Tkachenko, A. Ostendorf, C. Fallnich, B. N. Chichkov

Laser Zentrum Hannover e.V., Hollerithallee 8, D-30419 Hannover, Germany E-mail: ae@lzh.de

T. Mißalla, M. C. Schu¨rmann

JENOPTIK Mikrotechnik GmbH, Go¨schwitzer Straße 40, D-07745 Jena, Germany

K. Ga¨bel, G. Schriever, U. Stamm

XTREME Technologies GmbH, Hans-Bo¨ckler-Straße 27, D-37079 Go¨ttingen, Germany

J. Micro/Nanolith. MEMS MOEMS. 2(2), 136-139 (Apr 01, 2003). doi:10.1117/1.1532350
History: Received Jul. 15, 2002; Revised Oct. 30, 2002; Accepted Nov. 4, 2002; Online April 11, 2003
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Generation of extreme ultraviolet (EUV) radiation from solid targets is studied and a compact EUV source for small-scale lithographic applications and EUV metrology is developed. This source is based on a transfer of conventional x-ray tube technology into the EUV spectral range. As in an ordinary x-ray tube, electrons are generated by a tungsten filament and accelerated in a high-voltage electric field toward a solid target. In the demonstrated “EUV tube” beryllium and silicon targets are used to generate radiation at 11.4 and 13.5 nm, respectively. The absolute conversion efficiencies into EUV photons at 13.5 nm are measured. Prospects for a further power scaling of the EUV source are discussed. © 2003 Society of Photo-Optical Instrumentation Engineers.

© 2003 Society of Photo-Optical Instrumentation Engineers

Citation

A. Egbert ; B. Mader ; B. Tkachenko ; A. Ostendorf ; C. Fallnich, et al.
"Compact electron-based extreme ultraviolet source at 13.5 nm", J. Micro/Nanolith. MEMS MOEMS. 2(2), 136-139 (Apr 01, 2003). ; http://dx.doi.org/10.1117/1.1532350


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