Special Section on Double-Patterning Lithography

Double-patterning requirements for optical lithography and prospects for optical extension without double patterning

[+] Author Affiliations
Andrew J. Hazelton

Nikon Corporation, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 100-8331, Japan

Shinji Wakamoto

Nikon Corporation, Miizugahara, 201-9, Kumagaya, Saitama 360-8559, Japan

Shigeru Hirukawa

Nikon Corporation, Miizugahara, 201-9, Kumagaya, Saitama 360-8559, Japan

Martin McCallum

Nikon Precision Europe GmbH, Appleton Place, Appleton Parkway, Eliburn, Livingston, West Lothian EH54 7EZ, United Kingdom

Nobutaka Magome

Nikon Corporation, Miizugahara, 201-9, Kumagaya, Saitama 360-8559, Japan

Jun Ishikawa

Nikon Corporation, Miizugahara, 201-9, Kumagaya, Saitama 360-8559, Japan

Céline Lapeyre

CEA/LETI-Minatec, 17, rue des Martyrs, 38054 Grenoble Cedex 9, France

Isabelle Guilmeau

CEA/LETI-Minatec, 17, rue des Martyrs, 38054 Grenoble Cedex 9, France

Sébastien Barnola

CEA/LETI-Minatec, 17, rue des Martyrs, 38054 Grenoble Cedex 9, France

Stéphanie Gaugiran

CEA/LETI-Minatec, 17, rue des Martyrs, 38054 Grenoble Cedex 9, France

J. Micro/Nanolith. MEMS MOEMS. 8(1), 011003 (January 06, 2009). doi:10.1117/1.3023077
History: Received May 15, 2008; Revised July 31, 2008; Accepted August 05, 2008; Published January 06, 2009
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Double patterning (DP) has now become a fixture on the development roadmaps of many device manufacturers for half pitches of 32nm and beyond. Depending on the device feature, different types of DP and double exposure (DE) are being considered. This paper focuses on the requirements of the most complex forms of DP, pitch-splitting (where line density is doubled through two exposures) and spacer processes (where a deposition process is used to achieve the final pattern). Budgets for critical dimension uniformity and overlay are presented along with tool and process requirements to achieve these budgets. Experimental results showing 45-nm lines and spaces using dry ArF lithography with a k1 factor of 0.20 are presented to highlight some of the challenges. Finally, alternatives to DP are presented.

Figures in this Article
© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Andrew J. Hazelton ; Shinji Wakamoto ; Shigeru Hirukawa ; Martin McCallum ; Nobutaka Magome, et al.
"Double-patterning requirements for optical lithography and prospects for optical extension without double patterning", J. Micro/Nanolith. MEMS MOEMS. 8(1), 011003 (January 06, 2009). ; http://dx.doi.org/10.1117/1.3023077


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