Regular Articles

Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects

[+] Author Affiliations
Jenah Harris-Jones

Sematech Inc., Albany, New York

Emilio Stinzianni

Sematech Inc., Albany, New York

Chihcheng Lin

Sematech Inc., Albany, New York

Vibhu Jindal

Sematech Inc., Albany, New York

Ranganath Teki

Sematech Inc., Albany, New York

Hyuk Joo Kwon

Samsung Electronics Co. Ltd., Hwasung-si, Gyunggi-do, Republic of Korea

J. Micro/Nanolith. MEMS MOEMS. 12(1), 013007 (Feb 06, 2013). doi:10.1117/1.JMM.12.1.013007
History: Received June 13, 2012; Revised November 9, 2012; Accepted December 10, 2012
Text Size: A A A

Abstract.  Characterization of defects and their sources is essential for developing mitigation solutions to support the production of defect-free extreme ultraviolet (EUV) mask blanks. The characterization of sub-100-nm defects pose challenges to the conventional metrology techniques, such as atomic force microscopy and scanning electron microscopy, limiting mitigation of nanoscale defects. SEMATECH’s Mask Blank Development Center houses advanced metrology capabilities that include transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) to address these shortcomings. Scanning TEM was used to study the disruption of the Mo/Si multilayer of phase defects and to perform elemental analysis with energy dispersive x-ray spectroscopy that has supported projects including substrate smoothing activities, deposition simulation development, and defect printability studies. The Auger instrument was used to create elemental maps for defect identification and to characterize the ion beam deposition tool. Using advanced metrology, mitigation of small defects is being realized, yielding mask blanks with defect counts as low as eight defects at 50-nm sensitivity (Lasertec M7360 SiO2 sphere equivalent) measured over the quality area of 132×132mm2. The issues with the metrology of increasingly small EUV mask blank defects will be outlined, and comprehensive defect characterization results using TEM and AES will be presented.

Figures in this Article
© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Jenah Harris-Jones ; Emilio Stinzianni ; Chihcheng Lin ; Vibhu Jindal ; Ranganath Teki, et al.
"Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects", J. Micro/Nanolith. MEMS MOEMS. 12(1), 013007 (Feb 06, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.1.013007


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.