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Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography

[+] Author Affiliations
Xiaolei Liu

Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics (SIOM), Laboratory of Information Optics and Opto-electronic Technology, Shanghai 201800, China

Xiangzhao Wang

Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics (SIOM), Laboratory of Information Optics and Opto-electronic Technology, Shanghai 201800, China

Sikun Li

Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics (SIOM), Laboratory of Information Optics and Opto-electronic Technology, Shanghai 201800, China

Guanyong Yan

Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics (SIOM), Laboratory of Information Optics and Opto-electronic Technology, Shanghai 201800, China

Andreas Erdmann

Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottky street 10, Erlangen 91058, Germany

J. Micro/Nanolith. MEMS MOEMS. 13(3), 033007 (Aug 08, 2014). doi:10.1117/1.JMM.13.3.033007
History: Received April 3, 2014; Revised June 10, 2014; Accepted July 2, 2014
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Abstract.  A fast model is developed for the simulation of the mask diffraction spectrum in extreme ultraviolet lithography. It combines a modified thin mask model and an equivalent layer method and provides an analytical expression of the diffraction spectrum of the mask. Based on this model, we perform a theoretical analysis of the mask shadowing effect. Mathematical expressions for the best mask (object space) focus position and for the required correction of the mask pattern size are derived. When the mask focus is positioned in the equivalent plane of the multilayer, the amount of pattern shift is reduced. When the mask pattern size is corrected using the derived formula, taking a space pattern with a target critical dimension (CD) of 22 nm as an example, the imaging CD bias between different oriented features is below 0.3 nm.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Xiaolei Liu ; Xiangzhao Wang ; Sikun Li ; Guanyong Yan and Andreas Erdmann
"Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS. 13(3), 033007 (Aug 08, 2014). ; http://dx.doi.org/10.1117/1.JMM.13.3.033007


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