2 April 2015 Subresolution assist features in extreme ultraviolet lithography
Author Affiliations +
Abstract
Lithographic critical dimension (CD) printing variability can be easily captured with a CD uniformity measurement; however, minimizing the variability is a challenging task that requires manipulation of many variables. Contact hole variability has a direct impact on device performance, while via variability affects metal area scaling and design. Subresolution assist features (SRAFs) have been used in the past to improve lithographic printing variability. SRAFs enhance the image log slope of nearby features but are not intended to print themselves. The role of SRAFs in extreme ultraviolet is explored here.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2015/$25.00 © 2015 SPIE
Deniz Civay, Erik A. Verduijn, Chris H. Clifford, Pawitter J. Mangat, and Thomas I. Wallow "Subresolution assist features in extreme ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(2), 023501 (2 April 2015). https://doi.org/10.1117/1.JMM.14.2.023501
Published: 2 April 2015
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
SRAF

Photomasks

Extreme ultraviolet

Printing

Semiconducting wafers

Extreme ultraviolet lithography

Critical dimension metrology

RELATED CONTENT

Overlay challenges in the era of high-NA
Proceedings of SPIE (April 27 2023)
EUV implementation of assist features in contact patterns
Proceedings of SPIE (March 18 2016)
SAQP and EUV block patterning of BEOL metal layers on...
Proceedings of SPIE (March 24 2017)
EUV flare correction for the half-pitch 22nm node
Proceedings of SPIE (March 20 2010)

Back to Top