Microfabrication

Fabrication of high aspect ratio structure and its releasing for silicon on insulator MEMS/MOEMS device application

[+] Author Affiliations
Ji Fan, Liang Cheng Tu

Huazhong University of Science and Technology, School of Physics, MOE Key Laboratory of Fundamental Physical Quantities Measurement, Wuhan 430074, China

Huazhong University of Science and Technology, Institute of Geophysics, Wuhan 430074, China

Wen Ting Zhang, Jin Quan Liu, Wen Jie Wu, Tao Zhu

Huazhong University of Science and Technology, School of Physics, MOE Key Laboratory of Fundamental Physical Quantities Measurement, Wuhan 430074, China

J. Micro/Nanolith. MEMS MOEMS. 14(2), 024502 (Jun 23, 2015). doi:10.1117/1.JMM.14.2.024502
History: Received April 3, 2015; Accepted May 28, 2015
Text Size: A A A

Abstract.  We systematically investigate the fabrication and dry-release technology for a high aspect ratio (HAR) structure with vertical and smooth silicon etching sidewalls. One-hundred-micrometer silicon on insulator (SOI) wafers are used in this work. By optimizing the process parameters of inductively coupled plasma deep reactive-ion etching, a HAR (251) structure with a microtrench width of 4μm has been demonstrated. A perfect etching profile has been obtained in which the structures present an almost perfect verticality of 0.10μm and no sidewall scallops. The root-mean square roughness of silicon sidewalls is 20 to 29 nm. An in situ dry-release method using notching effect is employed after etching. By analysis, we found that the final notch length is typically an aspect-ratio-dependent process. The structure designed in this work has been successfully released by this in situ dry-release method, and the released bottom roughness effectively prohibits the stiction mechanism. The results demonstrate potential applications for design and fabrication of HAR SOI MEMS/MOEMS.

Figures in this Article
© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Ji Fan ; Wen Ting Zhang ; Jin Quan Liu ; Wen Jie Wu ; Tao Zhu, et al.
"Fabrication of high aspect ratio structure and its releasing for silicon on insulator MEMS/MOEMS device application", J. Micro/Nanolith. MEMS MOEMS. 14(2), 024502 (Jun 23, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.2.024502


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Journal Articles

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.