2 May 2016 Intrafield overlay correction for illumination-based distortion
Author Affiliations +
Abstract
The use of different illumination source shapes and multipatterning processes used to generate sub–40-nm images can create image placement errors level to level, resulting in significant intrafield overlay errors. These errors arise because of the impact of the different pupil shapes on lens aberrations resolving into image placement errors as well as because different tools will react differently to the same pupil shapes. We compare the impact of two extreme illumination sources on intrafield image placement and its effect on overall pattern overlay. We also discuss a method to empirically isolate and measure the amount of intrafield overlay distortion relative to a reference illumination source and then use the results to correct the resultant image placement errors.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2016/$25.00 © 2016 SPIE
Michael Pike, Timothy Brunner, Bradley Morgenfeld, Nan Jing, and Timothy Wiltshire "Intrafield overlay correction for illumination-based distortion," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 021406 (2 May 2016). https://doi.org/10.1117/1.JMM.15.2.021406
Published: 2 May 2016
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Overlay metrology

Distortion

Scanners

Reticles

Image processing

Semiconducting wafers

Error analysis

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