We evaluate to apply EUV in memory cell instead of the two possible solutions of SADP with cut layer and LELE trimming with multi-mask to simplify processes. Memory cell is periodic main feature for the most area on a mask and dominates the most EUV OPC run time in full shot correction. In this paper we try to find a best way to handle cell area OPC and evaluate single mask to accomplish memory cell patterning. |
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Optical proximity correction
Extreme ultraviolet
Molybdenum
Photomasks
Data modeling
Critical dimension metrology
Source mask optimization