Paper
1 June 1990 Assessment of high-contrast G- and I-line resists using high-numerical-aperture exposure tools
Alois Gutmann, Johann Binder, Guenther Czech, Juergen Karl, Leonhard Mader, Daniel Sarlette, Wolfgang Henke
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Abstract
Tests of several high contrast g- and i-line resists furnish data with respect to the resolution limit focus and exposure latitudes thermal stability and Dill parameters. A g. -line stepper of NA 0. 48 and an i-line stepper of NA 0. 40 were primarily used for exposure to a minor extent a g-line stepper of NA 0. 55. The contributions to the focus budget available under production conditions are discussed. SAMPLE simulations extending NA to 0. 60 in the gline and 0. 50 in the i-line case give latitude trends to be expected in the near future. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alois Gutmann, Johann Binder, Guenther Czech, Juergen Karl, Leonhard Mader, Daniel Sarlette, and Wolfgang Henke "Assessment of high-contrast G- and I-line resists using high-numerical-aperture exposure tools", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20178
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Cited by 4 scholarly publications.
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KEYWORDS
Optical lithography

Semiconducting wafers

Solids

Monochromatic aberrations

Tolerancing

Reticles

Critical dimension metrology

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