Electron Beam Resist And Photoresist Behavior Of Polychrome Positive Resist

J. N. Helbert; C. C. Walker; P. A. Seese; A. J. Gonzales

doi:10.1117/12.931890

28 July 1981 Electron Beam Resist And Photoresist Behavior Of Polychrome Positive Resist

J. N. Helbert, C. C. Walker, P. A. Seese, A. J. Gonzales

Proceedings Volume 0275, Semiconductor Microlithography VI; (1981) https://doi.org/10.1117/12.931890
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

A commercially available positive photoresist, Polychrome 129 SF, has been evaluated as both a positive electron beam resist and photoresist. The photoresist sensitivity, measured uniquely for a given developer based upon image dimensional control, is determined to be less than that of AZ 1350, under as nearly equivalent conditions as possible. The E-beam resist sensitivity is lower than that of PMMA reference, but the resist possesses good resolution. Near vertical edge wall profiles are obtained for 1-micrometer lines, but no undercutting is ever achieved regardless of electron charge density magnitude. The resist is capable of submicron line and space E-beam resolution, and 0.50-0.75 micrometer wide isolated line patterns can be routinely achieved.

Citation Download Citation

J. N. Helbert, C. C. Walker, P. A. Seese, and A. J. Gonzales "Electron Beam Resist And Photoresist Behavior Of Polychrome Positive Resist", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931890

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