Paper
24 July 1996 CD metrology microscope SiSCAN 7325TQ for back-side measurement
Masaru Morita, Shigeru Tachikawa, Mikio Iida
Author Affiliations +
Abstract
Improvement of pattern placement accuracy is an important factor for the development of the electron beam (EB) lithography system for the next-generation photomask. It has been qualitatively pointed out that pattern shift error is induced by surface distortion of photomask. In this paper, we quantified pattern shift error induced by mask process and have identified aeolotropic magnification error and negligible orthogonality error. These results obtained by experiment and simulation indicate that attention must be paid to pattern shift error induced by mask process in fabrication of the next-generation photomask. Thus, a more rigid and stiffer photomask is required to reduce pattern shift error induced by coating and developing.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaru Morita, Shigeru Tachikawa, and Mikio Iida "CD metrology microscope SiSCAN 7325TQ for back-side measurement", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245228
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KEYWORDS
Reticles

Quartz

Critical dimension metrology

Optical components

Control systems

Microscopes

Objectives

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