Combining the best of bulk and surface micromachining using Si (111) substrates

James G. Fleming

doi:10.1117/12.324294

31 August 1998 Combining the best of bulk and surface micromachining using Si (111) substrates

James G. Fleming

Proceedings Volume 3511, Micromachining and Microfabrication Process Technology IV; (1998) https://doi.org/10.1117/12.324294
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States

Abstract

This process combines the best features of bulk and surface micromachining. It enables the production of stress free, thick, virtually arbitrarily shaped structures with well defined, thick or thin sacrificial layers, high sacrificial layer selectivity and large undercuts using IC compatible, processes. The basis of this approach is the use of readily available {111} oriented substrates, anisotropic Si trench etching, SiN masking and KOH etching.

Citation Download Citation

James G. Fleming "Combining the best of bulk and surface micromachining using Si (111) substrates", Proc. SPIE 3511, Micromachining and Microfabrication Process Technology IV, (31 August 1998); https://doi.org/10.1117/12.324294

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