KrF lithography for 130 nm

Jo Finders; Jan B.P. van Schoot; Peter Vanoppen; Mircea V. Dusa; Robert John Socha; Geert Vandenberghe; Kurt G. Ronse

doi:10.1117/12.389002

5 July 2000 KrF lithography for 130 nm

Jo Finders, Jan B.P. van Schoot, Peter Vanoppen, Mircea V. Dusa, Robert John Socha, Geert Vandenberghe, Kurt G. Ronse

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389002
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

As ArF lithography continues to mature, it can be expected that, KrF lithography combined with reticle and illumination enhancements will be preferred techniques, for cost- effective 130-nm node, in particular for low-end microprocessors, random logic and DRAM designs. There are tow main enhancement routes to extend KrF lithography. The first one entails the use of alternating phase shift masks.

Citation Download Citation

Jo Finders, Jan B.P. van Schoot, Peter Vanoppen, Mircea V. Dusa, Robert John Socha, Geert Vandenberghe, and Kurt G. Ronse "KrF lithography for 130 nm", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389002

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