A new concept of image imbalance correction for phase-shift mask lithography at 65 nm

Vishnu G. Kamat; Armen Kroyan

doi:10.1117/12.518165

17 December 2003 A new concept of image imbalance correction for phase-shift mask lithography at 65 nm

Vishnu G. Kamat, Armen Kroyan

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518165
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

As we approach the 65nm node, the impact of the image imbalance phenomenon in phase shift mask lithography is proving to have a serious impact on the robustness of the phase shift mask solution. In this work we describe a new concept for the phase shift imbalance correction. The method is based on an interference concept that allows the manipulation of the image intensity by placing sub resolution features within the zero phase regions. Rigorous 3D simulations illustrate the reduction in the intensity of the 0 degree phase regions to match the intensity of the 180 degree phase intensity, effectively correcting for the image imbalance. We show that the phase shift mask low sigma illumination conditions reduce the risk of printing these sub-resolution binary features increasing the flexibility to vary the size of the feature based on circumstances to fine tune the correction locally.

Citation Download Citation

Vishnu G. Kamat and Armen Kroyan "A new concept of image imbalance correction for phase-shift mask lithography at 65 nm", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518165

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KEYWORDS

Photomasks

Phase shifts

Manufacturing

Lithography

Semiconducting wafers

3D image processing

Image quality

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