Paper
20 May 2006 Fabrication of nanoimprint stamp and its application
Author Affiliations +
Abstract
Nanoimprint technology is placed on the ITRS 04 for the 32nm and 22nm technology node (half pitch of metal 1 layer for DRAM) competing technologies, which can also reach the throughput requirements of SEMI: EUV, DUV, X-ray and Electron projection lithography. Nanoimprint technology can be used for mainstream IC, nanoelectronics, polymer electronics, optics (wave guides, switches, lenses), data storage, biochemistry, life science (DNA), μTAS and microfluidics. However, the technology key of nanoimprint is stamp fabrication. In this paper, high resolution electron beam resist ZEP520 is used for the fabrication of 32 and 22nm nanoimprint stamp, PDMS material for nanoimprint is evaluated and the applications of nanoimprint technology using PDMS stamp for semiconductor, optoelectronics and biotechnology are presented.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yung-Chiang Ting and Shyi-Long Shy "Fabrication of nanoimprint stamp and its application", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62833H (20 May 2006); https://doi.org/10.1117/12.681836
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KEYWORDS
Nanoimprint lithography

Nanotechnology

Electron beams

Electron beam lithography

Nanolithography

Polymers

Biotechnology

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