Paper
16 March 2007 CD budget analysis on hole pattern in EUVL
Author Affiliations +
Abstract
In this paper we focus exclusively on hole process. The motivation here is to investigate on the performance of EUVL for hole patterning in relation to contributions from mask, exposure tool, and resist process. In this paper we investigated the patterning characteristics of arrayed, staggered, and isolated holes including features showing trench patterns.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nobuyuki Iriki, Hajime Aoyama, and Toshihiko Tanaka "CD budget analysis on hole pattern in EUVL", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172K (16 March 2007); https://doi.org/10.1117/12.711288
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KEYWORDS
Photomasks

Extreme ultraviolet lithography

Critical dimension metrology

Semiconducting wafers

Finite-difference time-domain method

Waveguides

Lithography

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