Paper
1 April 2010 Evaluation of maskless electron beam direct writing with double character projection apertures
Y. Midoh, T. Terasaka, K. Nakamae
Author Affiliations +
Abstract
In this paper, we propose and evaluate maskless electron beam direct writing (EBDW) with double character projection (CP) apertures. In the conventional CP-capable EBDW, the first aperture generates a square beam and the second aperture finalizes the complex character shape. In our proposed method, each aperture has complex character patterns. The double CP apertures system projects circuit patterns onto a wafer by the combined use of two apertures. We present a novel pattern writing algorithm for double CP apertures, especially a generation/merging method of character patterns. The experimental results on ITC'99 benchmark circuit b19 synthesized with Nangate 45nm Open Cell Library showed that throughput of the proposed method was enhanced up to 147.3% of the variable-shaped beam method and up to 117.5% of the conventional CP method.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Midoh, T. Terasaka, and K. Nakamae "Evaluation of maskless electron beam direct writing with double character projection apertures", Proc. SPIE 7637, Alternative Lithographic Technologies II, 76370D (1 April 2010); https://doi.org/10.1117/12.846461
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Cited by 2 patents.
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KEYWORDS
Semiconducting wafers

Electron beam direct write lithography

Vestigial sideband modulation

Double patterning technology

Electron beams

Beam shaping

Lithography

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