Paper
30 March 2010 Development of spin-on hard mask materials under resist in nano imprint lithography
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Abstract
Nanoimprint lithography is a newly developed patterning method that employs a hard template for the patterning of structures at micron and nanometerscales. This technique has many advantages such as cost reduction, high resolution, low line edge roughness (LER), and easy operation. However, resist peeling, defects, low degree of planarization, and low throughput issues present challenges that must be resolved in order to mass produce advanced nanometer-scale devices. In this study, the new approach of using spin-on hard mask materials under the resist to modify its adhesion during a UV irradiation process in nano imprint lithography was proposed to increase process latitudes. The performance of this process is evaluated by using step and flash imprint lithography. We expect that these spin-on hard mask materials (NCI-NIL-U series) under organic resist will be one of the most promising materials in the next generation of nano imprint lithography.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoshi Takei, Tsuyoshi Ogawa, Ryan Deschner, Kane Jen, Makoto Hanabata, and C. Grant Willson "Development of spin-on hard mask materials under resist in nano imprint lithography", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391C (30 March 2010); https://doi.org/10.1117/12.853200
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CITATIONS
Cited by 3 scholarly publications and 2 patents.
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KEYWORDS
Lithography

Photomasks

Ultraviolet radiation

Etching

Photoresist processing

Nanoimprint lithography

Electron beam lithography

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