Meso-scale simulation of the line-edge structure based on resist polymer molecules by negative-tone process

Hiroshi Morita

doi:10.1117/12.879587

15 April 2011 Meso-scale simulation of the line-edge structure based on resist polymer molecules by negative-tone process

Hiroshi Morita

Author Affiliations +

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79720W (2011) https://doi.org/10.1117/12.879587
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

We studied the line edge structure forming in the negative tone process using meso scale simulations. Our simulation is based on the dissipative particle dynamics (DPD) method. The simulation model of the lithographic process is developed in which the dynamics of a polymer chain in continuous model can be observed. In the negative tone process, the cross linking reaction is the key step to obtain the high resolution patterns. First we develop the model for the cross linking reaction. From our results in the dissolution test of the film, as the density of cross links increases, the soluble film to the developing liquid changed to the swelling (or insoluble) one. Once the threshold between soluble and insoluble conditions with changing the number of cross links, we can perform two kinds of simulations; 1) layered model simulation, and 2) line pattern simulation. In the layered model, more roughened edge can be found in the case of a thick interface than in the case of a thin interface. Our simulations can be applicable to study the LER problem and the dynamics of polymer chain including the chemical reaction will be one of the important origins of LER.

Citation Download Citation

Hiroshi Morita "Meso-scale simulation of the line-edge structure based on resist polymer molecules by negative-tone process", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720W (15 April 2011); https://doi.org/10.1117/12.879587

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