MRC optimization for EUV high NA imaging for the 32-nm HP technology node

Shih-En Tseng; Alek Chen

doi:10.1117/12.897221

22 April 2011 MRC optimization for EUV high NA imaging for the 32-nm HP technology node

Shih-En Tseng, Alek Chen

Proceedings Volume 8081, Photomask and Next-Generation Lithography Mask Technology XVIII; 80810H (2011) https://doi.org/10.1117/12.897221
Event: Photomask and NGL Mask Technology XVIII, 2011, Yokohama, Japan

Abstract

EUV is considered as the most promising candidate for manufacturing advanced semiconductors at the 32nm HP technology generation and beyond. It has been demonstrated that the ASML TWINSCAN NXE:3100 is able to print 27nm lines and spaces and 32nm contact holes with NA0.25. Moving forward, higher NA EUV system such as the ASML TWINSCAN NXE:3300B can generate a higher contrast aerial image due to improved diffractive order collection efficiency and is expected to achieve a greater percentage of under-exposure or dose reduction via mask biasing. In this work, we study by simulation the benefit of EUV high NA imaging in the MRC (Mask Rule Check) trade-offs required to achieve the viable manufacturing solutions for two device application scenarios: 6T-SRAM contact layer for the logic 14 nm technology node, and 32nm half pitch NAND Flash contact layer. The 3D mask effects versus Kirchhoff mask for these two applications are also investigated.

Citation Download Citation

Shih-En Tseng and Alek Chen "MRC optimization for EUV high NA imaging for the 32-nm HP technology node", Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 80810H (22 April 2011); https://doi.org/10.1117/12.897221

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KEYWORDS

Photomasks

Extreme ultraviolet

Critical dimension metrology

3D acquisition

Lithography

Manufacturing

Extreme ultraviolet lithography

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