Paper
17 April 2014 Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)
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Abstract
High numerical aperture (high-NA) extreme ultraviolet (EUV) is one option to enable a higher resolution than EUV can achieve with single patterning. An industry effort to achieve consensus on the key parameters of high-NA EUV is described. At high-NA, three-dimensional (3D) mask effects cause a loss of contrast in the image that is recovered by increasing the scanner de-magnification. This leads to a tradeoff between wafer field and mask size that has considerable impact on mask cost and scanner cost of ownership.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick A. Kearney, Obert Wood, Eric Hendrickx, Greg McIntyre, Soichi Inoue, Frank Goodwin, Stefan Wurm, Jan van Schoot, and Winfried Kaiser "Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481O (17 April 2014); https://doi.org/10.1117/12.2048397
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Cited by 9 scholarly publications.
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KEYWORDS
Photomasks

Extreme ultraviolet

Mirrors

Semiconducting wafers

Extreme ultraviolet lithography

Scanners

Imaging systems

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