Spectroscopic critical dimension technology (SCD) for directed self assembly

Senichi Nishibe; Thaddeus Dziura; Venkat Nagaswami; Roel Gronheid

doi:10.1117/12.2046647

2 April 2014 Spectroscopic critical dimension technology (SCD) for directed self assembly

Senichi Nishibe, Thaddeus Dziura, Venkat Nagaswami, Roel Gronheid

Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 90502U (2014) https://doi.org/10.1117/12.2046647
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Directed self-assembly (DSA) is being actively investigated as a potential patterning solution for future generation devices. While SEM based CD measurement is currently used in research and development, scatterometry-based techniques like spectroscopic CD (SCD) are preferred for high volume manufacturing. SCD can offer information about sub-surface features that are not available from CD-SEM measurement. Besides, SCD is a non-destructive, high throughput technique already adopted in HVM in several advanced nodes. The directed self assembly CD measurement can be challenging because of small dimensions and extremely thin layers in the DSA stack. In this study, the SCD technology was investigated for a 14 nm resolution PS-b-PMMA chemical epitaxy UW process optimized by imec. The DSA stack involves new materials such as cross-linkable polysterene (XPS) of thickness approximately 5 nm, ArF immersion resist (subsequently removed), -OH terminated neutral brush layer, and BCP material (Polystyrene-blockmethyl methacrylate of thickness roughly 20 to 30 nm). The mask contains a large CD and pitch matrix, for studying the quality of self-assembly as a function of the guide pattern dimensions. We report on the ability of SCD to characterize the dimensional variation in these targets and hence provide a viable process control solution.

Citation Download Citation

Senichi Nishibe, Thaddeus Dziura, Venkat Nagaswami, and Roel Gronheid "Spectroscopic critical dimension technology (SCD) for directed self assembly", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90502U (2 April 2014); https://doi.org/10.1117/12.2046647

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KEYWORDS

Directed self assembly

Single crystal X-ray diffraction

Semiconducting wafers

Critical dimension metrology

Scanning electron microscopy

Etching

Inspection

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