E-beam direct write of rectangular and mushroom gates for GaAs FETs

Zoilo C. H. Tan; Scott E. Silverman

doi:10.1117/12.20161

1 May 1990 E-beam direct write of rectangular and mushroom gates for GaAs FETs

Zoilo C. H. Tan, Scott E. Silverman

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20161
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

Electron-beam lithography was used to fabricate half-micron, quarter-micron and sub-quartermicron gates for MMIC applications. Both rectangular and mushroom gates were used. This paper describes our experience in the fabrication of various gates, with emphasis on obtaining good reproducibility and high yield. For optimum utilization of machine time, the operating condition of the exposure system was maintained at 30 kV and 1 .6-mm field size for most applications. In the case of extremely fine gates of 0. 1 .tm or less, the accelerating voltage used was 40 kV. Gates with excellent reproducibility and yield of □ 90% were obtained.

Citation Download Citation

Zoilo C. H. Tan and Scott E. Silverman "E-beam direct write of rectangular and mushroom gates for GaAs FETs", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20161

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