Noninvasive electrical characterization of semiconductor at bulk and interfaces

Regis Vanderhaghen; Samir Kasouit; Bernard Drevillon; Virginia Chu; Joao Conde; Hyunjong Kim; Jean Paul Kleider

doi:10.1117/12.482505

1 July 2003 Noninvasive electrical characterization of semiconductor at bulk and interfaces

Regis Vanderhaghen, Samir Kasouit, Bernard Drevillon, Virginia Chu, Joao Conde, Hyunjong Kim, Jean Paul Kleider

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.482505
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

The Spectroscopic Ellipsometry and the Time Resolved Microwave Conductivity (TRMC) are efficient tools for in-situ non invasive characterizations during the growth of semiconductors and interfaces. From ellipsometry, one estimates the optical absorption, structural composition of the material in the bulk and near the interface. The TRMC measures the transient microwave reflectivity induced by carriers photogenerated by a pulsed laser. From TRMC, one may estimate the mobility of the carriers in a thin film or in bulk materials, the carrier lifetime in the bulk or near the surface. Particularly, we characterize microcrystalline silicon: electron and hole mobility, electron mobility inside the grain, trapping. We also analyze the semiconductor/dielectric interface, particularly for c-Si/SiO₂. Using various UV laser fluxes, we can characterize the surface recombination, estimate the interface field and compare with the density of states obtained from capacitance measurement. The results are compared with simulation.

Citation Download Citation

Regis Vanderhaghen, Samir Kasouit, Bernard Drevillon, Virginia Chu, Joao Conde, Hyunjong Kim, and Jean Paul Kleider "Noninvasive electrical characterization of semiconductor at bulk and interfaces", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.482505

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