We investigated at room temperature the Franz-Keldysh effect in GeSn layers with Sn concentrations up to 13%. Several p-i-n stacks with indirect and direct band-gaps were grown by Reduced Pressure Chemical Vapor Deposition (RPCVD) with Ge2H6, Si2H6 and SnCl4 precursors. Direct band-gap energies and absorption coefficient were determined in transmission by electro-absorption measurements. The direct band-gap position was consistent with our k.p model. A maximum modulation of 1% was obtained at the direct band gap for a 0.5 V bias.
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