Integrated electro-optic modulators offer huge potential to meet communications and computations' rapidly growing bandwidth requirements. Devices based on silicon allow high-volume, low-cost CMOS fabrication, and co-integration with the CMOS circuits. They are promising candidates for mass-producible Tb/s-scale inter-rack and intra-rack interconnects. This talk will focus on our advancement of silicon-based optical modulators: (1) miniaturized all silicon MOSCAP modulators for co-packaged optics and its integration with low voltage drivers, allowing low optical power consumption of 2 pJ/bit. (2) Novel carrier absorption enhanced electro-optical modulation in MOSCAP ring resonators towards integration with ultra-low voltage (<1V) CMOS drivers; (3) Carrier depletion ring unity device for large scale and high bandwidth density error-free links; (4) Linear DC-Kerr effect dominated silicon modulators towards lidar and quantum applications.
At the University of Southampton, we have established an educational photonics pathway in which we teach our undergraduate and postgraduate students the fundamentals of silicon photonics. We have designed silicon photonics laboratories, for both simulation and characterization, where our students have opportunities to design their chips and characterize them. Our assessment strategy aims to improve students’ self-assessment and feedback skills. The material we have developed is also being used for training our technicians and PhD students.
We present the development of Ge-on-Si waveguide-based devices for low-noise mid-infrared absorption spectroscopy of aqueous solutions, targeting wavelengths between 6 and 10 μm, that are able to reduce the relative intensity noise which is a key roadblock when measuring tiny analyte absorptions masked by a large background matrix absorption. The sensor uses a pair of integrated thermo-optic switches to continuously switch light between a reference waveguide and a sensor waveguide, so that common noise components can be cancelled out, even when the light source and photodetector are not integrated on the same chip.
High-speed (upwards of 105 coordinates s-1) and long-range (~10 m) absolute distance measurement applications based on frequency scanning interferometry (FSI) generate very high modulation frequencies (typically >100 GHz) due to the laser frequency sweep rate and the large imbalance between the reference and object arms. Such systems are currently impractical due to the extremely high cost associated with sampling at these signal frequencies. Adaptive delay lines (ADLs) were recently proposed as a solution to balance the interferometer and therefore reduce sampling rate requirements by a factor of 2N, where N is the number of switches in the ADL [1, 2]. The technique has been successfully demonstrated in the lab using bulk optics and optical fiber configurations, and further reduction in size and cost will increase the breadth of metrology applications that can be addressed. Silicon photonics constitute an effective platform to miniaturize ADLs to chip-scale, simplifying instrument manufacture and providing a more robust configuration compared to bulk-optics and fiber-based solutions. We discuss the design and fabrication of chip-scale ADLs on a silicon on insulator (SOI) photonics platform, using optical switches based on heaters, multi-mode interferometer (MMI) couplers and Mach-Zehnder interferometers (MZI). We also establish the heater voltages of 4 switches in series, required to switch the optical path in the reference arm, a necessary step to use the device for FSI range measurements.
To improve student learning experience in several photonics modules we teach at the University of Southampton, we use software packages for photonic circuit simulation and design, our cleanroom complex for the fabrication of the designed circuits, and experimental labs that we have developed for the characterization.
A chip-scale solid-state wavelength measuring device based on a silicon photonics platform is presented. It has no moving parts and allows single-shot wavelength measurement with high precision over a nominal bandwidth of 40 nm in the Oband. The wavemeter design is based on multimode interferometer (MMI) couplers and a multi-band Mach–Zehnder interferometer (MZI) structure with exponentially increasing optical path differences and in-phase quadrature detection. The design of the MMI couplers is supported by simulations using the Finite-Difference Time-Domain (FDTD) method. The design, experimental evaluation, and calibration of the device are discussed. Observed performance indicates a spectral support of 38.069 nm (i.e., frequency bandwidth 6.608 THz), with a resolution of 8.3 pm (1σ), corresponding to 1 part in 4,587. This wavelength meter approach has emerged from a need in absolute distance measurements using frequency scanning interferometry, where knowledge of the instantaneous wavelength of a tunable laser is required to relate signal frequency with target range. We also present an adaptive delay line on a chip, demonstrate its use for range measurements, and suggest how the wavelength meter could evolve for real-time applications.
High speed optical modulators are important for a number of applications served by silicon photonics. Here we present our recent work towards high speed free carrier accumulation based optical modulators where a high speed and efficient operation is achieved. Such silicon optical modulators typically need to be built in sub-micrometre sized waveguides which are challenging to couple light to and from. Also presented are experimental results from a buried 3D-taper that is able to couple efficiently between a waveguide of height ~1.5um and a 220nm high waveguide. Losses below 0.6dB are achieved limited by the loss of the material used.
This paper presents a summary review of some of the available foundry services offering Silicon Photonics, comparing the key technologies available to European technology innovators that drive the technology sector. The foundries providing these unique technologies include AMF, CEA Leti, CORNERSTONE, Global Foundries, ihp, imec, and LioniX International. The review will also show examples of Silicon Photonics in emerging application domains from selected foundries.
The silicon optical modulator is a key component in a high speed optical data link. To advance the modulator performance beyond the popular carrier depletion based devices, we have produced a capacitive device which is instead based upon the accumulation of free carriers either side of a thin insulating layer positioned in the middle of the waveguide. Such a device has a superior efficiency compared with the carrier depletion approach allowing compactness and improved power consumption whilst retaining high speed operation and CMOS compatibility.
The interest in developing high-performance optical modulator to meet the growing demands of data processing speed has increased over the last decade. While there have been significant research efforts in developing standalone silicon modulators, works on integrating those with electronics is limited, which is necessary for the practical implementation of short-reach optical interconnects.
In contrast to previous work in the field where electronic–photonic integration was mostly limited to the physical coupling approach, we have introduced a new design philosophy, where photonics and electronics must be considered as a single integrated system in order to tackle the demanding technical challenges of this field.
In this work, I shall present our recent 100Gb/s silicon photonics transmitter, where photonic and electronic devices are co-designed synergistically in terms of device packaging, power efficiency, operation speed, footprint and modulation format.
As the market adoption of silicon photonics technologies continues to rise, and ever more fabless companies enter the market, there is a clear need for a flexible device prototyping foundry service that retains the ability for device level innovation, whilst also offering a clear route to market. The CORNERSTONE platform offers an affordable multi-project-wafer (MPW) service that allows a degree of customisation, which may not be accessible at other foundries. Through the use of DUV projection lithography, fabrication processes can be easily transferred to other foundries for mass production. Additionally, the ability to exploit high resolution e-beam lithography for certain layers mimics more advanced technology nodes, should this be deemed necessary. Several silicon-on-insulator platforms enable a plethora of applications including datacoms, LIDAR and mid-IR sensing.
This talk gives an overview of the present status of the CORNERSTONE platforms, and an outlook for the future.
The field of silicon photonics has expanded rapidly over the past several decades. This has led to a degree of standardisation in the commercial device fabrication foundries that are available for universities and fabless companies alike. Whilst this is advantageous in terms of yield, repeatability etc., it is not conducive for researchers to develop new and novel devices for future systems. CORNERSTONE offers researchers a flexible device prototyping capability that can support photonics research around the world.
The CORNERSTONE project (Capability for OptoelectRoNics, mEtamateRialS, nanoTechnOlogy, aNd sEnsing) is a UK Engineering and Physical Sciences Research Council (EPSRC) funded project between 3 UK universities: University of Southampton, University of Glasgow and University of Surrey. The project is based on deep-ultraviolet (DUV) photolithography equipment, installed at the University of Southampton, centred around a 248 nm Scanner, the first of its kind in a UK university. Utilising these facilities, CORNERSTONE will offer a multi-project wafer (MPW) service on several silicon-on-insulator (SOI) platforms (220 nm, 340 nm & 500 nm) for both passive and active silicon photonic devices.
This talk will give an overview of the CORNERSTONE project, present some of its early data, and summarise future MPW offerings.
The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 μm x 40 μm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit.
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelength region and we report several active and passive devices realised in these materials. We particularly focus on devices and circuits for wavelengths longer than 7 micrometers.
We review our recent developments of the trimming techniques for correcting the operating point of ring resonator and Mach-Zehnder Interferometers (MZIs). This technology has been employed to fine-tune the effective index of waveguides, and therefore the operating point of photonic devices, enabling permanent correction of optical phase error induced by fabrication variations. Large resonance wavelength shift of ring resonators was demonstrated, and the shift can be tuned via changing the laser power used for annealing. A higher accuracy trimming technique with a scanning laser was also demonstrated to fine-tune the operating point of integrated MZIs. The effective index change of the optical mode is up to 0.19 in our measurements, which is approximately an order of magnitude improvement compared to previous work, whilst retaining similar excess optical loss.
Silicon photonics has traditionally focused on near infrared wavelengths, with tremendous progress seen over the past decade. However, more recently, research has extended into mid infrared wavelengths of 2 μm and beyond. Optical modulators are a key component for silicon photonics interconnects at both the conventional communication wavelengths of 1.3 μm and 1.55 μm, and the emerging mid-infrared wavelengths. The mid-infrared wavelength range is particularly interesting for a number of applications, including sensing, healthcare and communications. The absorption band of conventional germanium photodetectors only extends to approximately 1.55 μm, so alternative methods of photodetection are required for the mid-infrared wavelengths. One possible CMOS compatible solution is a silicon defect detector. Here, we present our recent results in these areas. Modulation at the wavelength of 2 μm has been theoretically investigated, and photodetection above 25 Gb/s has been practically demonstrated.
In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. We demonstrate the principle of a series of devices for wafers scale testing and have also implemented the ion implantation based refractive index change in integrated photonics devices for device trimming.
We present three main material platforms: SOI, suspended Si and Ge on Si. We report low loss SOI waveguides (rib, strip, slot) with losses of ~1dB/cm. We also show efficient modulators and detectors realized in SOI, as well as filters and multiplexers. To extend transparency of SOI waveguides, bottom oxide cladding can be removed. We have fabricated low loss passive devices in a suspended platform that employ subwavelength gratings. Ge on Si material can have larger transparency range than suspended Si. We have designed passive devices in this platform, demonstrated all optical modulation and carried out two photon absorption measurements. We have also investigated theoretically free carrier optical modulation in Ge.
In this paper we present SOI, suspended Si, and Ge-on-Si photonic platforms and devices for the mid-infrared. We demonstrate low loss strip and slot waveguides in SOI and show efficient strip-slot couplers. A Vernier configuration based on racetrack resonators in SOI has been also investigated. Mid-infrared detection using defect engineered silicon waveguides is reported at the wavelength of 2-2.5 μm. In order to extend transparency of Si waveguides, the bottom oxide cladding needs to be removed. We report a novel suspended Si design based on subwavelength structures that is more robust than previously reported suspended designs. We have fabricated record low loss Ge-on-Si waveguides, as well as several other passive devices in this platform. All optical modulation in Ge is also analyzed.
In this paper we will discuss recent results in our work on Silicon Photonics. This will include active and passive devices for a range of applications. Specifically we will include work on modulators and drivers, deposited waveguides, multiplexers, device integration and Mid IR silicon photonics. These devices and technologies are important both for established applications such as integrated transceivers for short reach interconnect, as well as emerging applications such as disposable sensors and mass market photonics.
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