Mr. Jan O. Gaudestad Profile

Jan O. Gaudestad

CEO

SPIE Involvement:

Author

Websites:

Company Website

Publications (21)

Proceedings Article | 18 September 2024 Paper

New optical metrology method for measuring shape of a lithography photo mask

Guillermo Castro Luis, Kiril Ivanov Kurtev, Miguel Jiménez, Juan Trujillo-Sevilla, Jose Manuel Ramos-Rodríguez, Jan Gaudestad

Proceedings Volume 13273, 132730T (2024) https://doi.org/10.1117/12.3026887

KEYWORDS: Photomasks, Reflection, Chromium, Quartz, Semiconducting wafers, Distortion, Wavefronts, Lithography, Overlay metrology, Phase imaging

Read Abstract +

Proceedings Article | 10 April 2024 Poster + Paper

New optical metrology technique for measuring the shape of a lithography photo mask

Guillermo Castro Luis, Kiril Ivanov Kurtev, Miguel Jiménez, Juan Trujillo-Sevilla, Jose Manuel Ramos-Rodríguez, Jan Gaudestad

Proceedings Volume 12955, 129553L (2024) https://doi.org/10.1117/12.3011886

KEYWORDS: Photomasks, Reflection, Chromium, Pellicles, Quartz, Semiconducting wafers, Wavefronts, Lithography, Neodymium, Phase imaging

Read Abstract +

Proceedings Article | 11 March 2024 Presentation + Paper

Repeatability study of silicon wafer shape measurements

Miguel Jiménez, Kiril Ivanov Kurtev, Juan Trujillo-Sevilla, Rubén Abrante, Jose Manuel Ramos-Rodríguez, Jan Gaudestad

Proceedings Volume 12893, 128930E (2024) https://doi.org/10.1117/12.2692506

KEYWORDS: Semiconducting wafers, Silicon, Cameras, Photovoltaics, Mirrors, Wavefronts, Reflection, Data acquisition, Calibration, Phase imaging

Read Abstract +

Proceedings Article | 21 November 2023 Presentation + Paper

New technique for measuring free-form wafer shape to enable wafer distortion predictions

Kiril Ivanov Kurteva, Guillermo Castro Luis, Juan Trujillo-Sevilla, Jan Gaudestad, Richard van Haren, Leon van Dijk, Ronald Otten

Proceedings Volume 12750, 127500H (2023) https://doi.org/10.1117/12.2687605

KEYWORDS: Semiconducting wafers, Optical alignment, Silicon, Alignment modeling, Data acquisition, Coating stress, Wavefronts, Wafer-level optics, Scanners, Optical parametric oscillators

Read Abstract +

On product overlay (OPO) is one of the most critical parameters for continued scaling according to Moore’s law. Besides the lithography scanner, also non-lithography processes contribute to the OPO performance. For example, processes like etching and thin film deposition can introduce stress, or stress changes, in the thin films on top of the silicon wafers. In general, the scanner Higher Order Wafer Alignment model up to 3rd order (HOWA3) has proven to be adequate to correct for most process-induced wafer distortions. This model is typically used with 28 wafer alignment marks placed across the wafer to correct for more global stress-induced distortions. It is evident that if the stress variation manifests itself on shorter length scales, either more alignment marks are needed in combination with a more sophisticated wafer alignment model, or an alternative measurement of the wafer distortion is required. A viable alternative to characterize local wafer deformations is by measuring the free-form wafer-shape change due to processing. In case the wafer-shape change can be translated into a wafer distortion map, it can be complementary to what is already captured by the scanner wafer alignment model. In this paper, we would like to explore this functionality that is based on a new method to measure the free-form wafer shape. Wave Front Phase Imaging (WFPI) generates the wafer shape by registering the intensity of the light reflected off the patterned or blank silicon wafer surface at two different locations along the optical path. The wafer is held vertically to allow for the free-form wafer shape to be measured without being affected by gravity. We show data acquired on specialty made silicon wafers using a WFPI lab tool that acquired 16.3 million data points on a 300mm wafer with 65μm spatial resolution. The obtained free-form wafer-shape measurements are fed into existing prediction models and the resulting wafer distortion maps are compared with scanner measurements.

Proceedings Article | 5 October 2023 Paper

New wave front phase sensor used for 3D shape measurements of patterned silicon wafers

Kiril Ivanov Kurtev, Juan Trujillo-Sevilla, Miguel Jiméneza, Rubén Abranta, Guillermo Castro Luis, Jan Gaudestad

Proceedings Volume 12802, 128020C (2023) https://doi.org/10.1117/12.2675624

KEYWORDS: Semiconducting wafers, Silicon, Data acquisition, Reflection, Wavefronts, Metals, Image sensors, Cameras, Wafer-level optics, Collimation

Read Abstract +

On product overlay (OPO) is one of the most critical parameters for the continued scaling according to Moore’s law. Without good overlay between the mask and the silicon wafer inside the lithography tool, yield will suffer. As the OPO budget shrinks, non-lithography process induced stress causing in-plane distortions (IPD) becomes a more dominant contributor to the shrinking overlay budget. To estimate the process induced in-plane wafer distortion after cucking the wafer onto the scanner board, a high-resolution measurement of the freeform wafer shape of the unclamped wafer, with the gravity effect removed, is needed. A high-resolution wafer shape map using a feed-forward prediction algorithm, as has been published by ASML, can account for both intra and inter die wafer distortions, minimizing the need for alignment marks on the die and wafer in addition to that it can be performed at any lithography layer. Up until now, the semiconductor industry has been using Coherent Gradient Sensing (CGS) interferometry or Fizeau interferometry to generate the wave front phase from the reflecting wafer surface to measure the free form wafer shape. However, these techniques have only been available for 300mm wafers. In this paper we introduce Wave Front Phase Imaging (WFPI), a new technique that can measure the free form wafer shape of a patterned silicon wafer using only the intensity of the reflected light. In the WFPI system, the wafer is held vertically to avoid the effects of gravity during measurements. The wave front phase is then measured by acquiring only the 2-dimensional intensity distribution of the reflected non-coherent light at two or more distances along the optical path using a standard, low noise, CMOS sensor. This method allows for very high data acquisition speed, equal to the camera’s shutter time, and a high number of data points with the same number of pixels as available in the digital imaging sensor. In the measurements presented in this paper, we acquired 7.3 million data points on a full 200mm patterned silicon wafer with a lateral resolution of 65μm. The same system presented can also acquire data on a 300mm silicon wafer in which case 16.3 million data points with the same 65μm spatial resolution were collected.

Proceedings Article | 28 September 2023 Presentation + Paper

New patterned silicon wafer shape metrology system

Kiril Ivanov Kurtev, Juan Trujillo-Sevilla, Guillermo Castro Luis, Miguel Jiméneza, Rubén Abrante, José Manuel Ramos-Rodríguez, Jan Gaudestad

Proceedings Volume 12665, 126650A (2023) https://doi.org/10.1117/12.2678349

KEYWORDS: Semiconducting wafers, Silicon, Data acquisition, Reflection, Wavefronts, Image sensors, Cameras, Wafer-level optics, Photovoltaics, Metrology

Read Abstract +

On-product overlay (OPO), with its continually shrinking overlay budget, remains a constraint in the continued effort at increasing device yield. Overlay metrology capability currently lags the need for improved overlay control, especially for multi-patterning applications. The free form shape of the silicon wafer is critical for process monitoring and is usually controlled through bow and warp measurements during the process flow. As the OPO budget shrinks, non-lithography process induced stress causing in plane distortions (IPD) becomes a more dominant contributor to the shrinking overlay budget. To estimate the wafer process induced IPD parameters after cucking the wafer inside the lithographic scanner, a high-resolution measurement of the freeform wafer shape of the unclamped wafer is needed. The free form wafer shape can then be used in a feed-forward prediction algorithm to predict both intra field and intra die distortions, as has been published by ASML, to minimize the need for alignment marks on the die and wafer and allows for overlay to be performed at any lithography layer. Up until now, the semiconductor industry has been using Coherent Gradient Sensing (CGS) interferometry or Fizeau interferometry to generate the wave front phase from the reflecting wafer surface. The wave front phase is then used to calculate the slope which again generates a shape map of the silicon wafer. However, these techniques have only been available for 300mm wafers. In this paper we introduce Wave Front Phase Imaging (WFPI), a new technique that can measure the free form wafer shape of a patterned silicon wafer using only the intensity of the reflected light. In the WFPI system, the wafer is held vertically to avoid the effects of gravity during measurements. The wave front phase is then measured by acquiring only the 2- dimensional intensity distribution of the reflected non-coherent light at two or more distances along the optical path using a standard, low noise, CMOS sensor. This method allows for very high data acquisition speed, equal to the camera’s shutter time, and a high number of data points with the same number of pixels as available in the digital imaging sensor. In the measurements presented in this paper, we acquired 7.3 million data points on a full 200mm patterned silicon wafer with a lateral resolution of 65μm. The same system presented can also acquire data on a 300mm silicon wafer in which case 16.3 million data points with the same 65μm spatial resolution were collected.

Proceedings Article | 15 August 2023 Poster + Paper

New wafer shape measurement technique for 300mm blank vertically held silicon wafers

Juan Trujillo-Sevilla, Rubén Abrante, Miguel Jiménez, Kiril Ivanov Kurtev, Guillermo Castro Luis, Jan Gaudestad

Proceedings Volume 12618, 126182X (2023) https://doi.org/10.1117/12.2674201

KEYWORDS: Semiconducting wafers, Silicon, Wavefronts, Reflection, Cameras, Image sensors, Collimation, Photovoltaics, Data acquisition, Wafer testing

Read Abstract +

Proceedings Article | 27 April 2023 Poster + Paper

New metrology technique for measuring the free shape of a patterned 300mm wafer held vertically

Juan Trujillo-Sevilla, Óscar Casanova-González, Alex Roqué-Velasco, Miguel Jesús Sicilia, Jose Manuel Ramos-Rodríguez, Jan Gaudestad

Proceedings Volume 12496, 124963G (2023) https://doi.org/10.1117/12.2661903

KEYWORDS: Semiconducting wafers, Silicon, Reflection, Wavefronts, Data acquisition, Cameras, Wafer-level optics, Image sensors, Phase imaging, Metrology

Read Abstract +

Proceedings Article | 8 March 2023 Presentation + Paper

New wafer shape measurement technique for 300mm blank vertically held silicon wafer

Juan Trujillo-Sevilla, Óscar Casanova-González, Alex Roqué-Velasco, Javier González Pardo, Jose Manuel Ramos-Rodríguez, Jan Gaudestad

Proceedings Volume 12428, 124280U (2023) https://doi.org/10.1117/12.2651981

KEYWORDS: Semiconducting wafers, Silicon, Wavefronts, Reflection, Data acquisition, Collimation, Camera shutters, Overlay metrology, Gaussian filters, Cameras

Read Abstract +

Proceedings Article | 7 December 2022 Poster + Paper

New wavefront phase sensor used for 3D shape measurements of silicon wafers

Juan Trujillo-Sevilla, Alex Roqué-Velasco, Miguel Jesús Sicilia, Óscar Casanova-González, Jose Manuel Ramos-Rodríguez, Jan Gaudestad

Proceedings Volume 12274, 122741F (2022) https://doi.org/10.1117/12.2645969

KEYWORDS: Semiconducting wafers, Silicon, Wavefronts, Cameras, Sensors, Reflectivity, 3D metrology, Wafer-level optics, Phase imaging, Image sensors

Read Abstract +

Proceedings Article | 1 December 2022 Presentation + Paper

New wave front phase sensor used for 3D shape measurements of patterned silicon wafers

Juan Trujillo-Sevilla, Óscar Casanova-González, Alex Roqué-Velasco, Miguel Jesús Sicilia, Javier González Pardo, José Manuel Ramos-Rodríguez, Jan Gaudestad

Proceedings Volume 12292, 122920P (2022) https://doi.org/10.1117/12.2642287

KEYWORDS: Semiconducting wafers, Silicon, Wavefronts, Metals, Data acquisition, Image sensors, Reflectivity, Surface finishing, Interferometry, Beam splitters

Read Abstract +

Proceedings Article | 3 October 2022 Presentation + Paper

Wave front phase imaging for silicon wafer metrology

Juan Trujillo-Sevilla, Alex Roqué-Velasco, Miguel Jesús Sicilia, Óscar Casanova-González, José Manuel Rodríguez-Ramos, Jan Gaudestad

Proceedings Volume 12216, 1221605 (2022) https://doi.org/10.1117/12.2632499

KEYWORDS: Semiconducting wafers, Silicon, Wavefronts, Cameras, Reflectivity, Phase imaging, Metrology, Image sensors, Data acquisition, Wafer-level optics

Read Abstract +

Proceedings Article | 26 May 2022 Presentation + Paper

New metrology technique for measuring patterned wafer geometry on a full 300mm wafer

Juan Trujillo-Sevilla, José Manuel Rodríguez-Ramos, Jan Gaudestad, Tom Osterheld, Benjamin Cherian, Brian Brown

Proceedings Volume 12053, 1205303 (2022) https://doi.org/10.1117/12.2614320

KEYWORDS: Semiconducting wafers, Silicon, Gaussian filters, Wavefronts, Wafer-level optics, Metrology, Cameras, Overlay metrology, Imaging systems, Data acquisition

Read Abstract +

Proceedings Article | 5 March 2022 Presentation + Paper

New high repeatability wafer geometry measurement technique for full 200mm and 300mm blank wafers

Juan Trujillo-Sevilla, Álvaro Pérez-García, Óscar Casanova-González, Miriam Velasco-Ocaña, Sabato Ceruso, Ricardo Oliva-García, Óscar Gómez-Cárdenes, Javier Martín-Hernández, Alex Roqué-Velasco, José Manuel Rodríguez-Ramos, Jan Gaudestad

Proceedings Volume 12008, 120080A (2022) https://doi.org/10.1117/12.2607315

KEYWORDS: Semiconducting wafers, Photovoltaics, Silicon, Cameras, Data acquisition, Gaussian filters, Wavefronts, Lithography, Imaging systems

Read Abstract +

Proceedings Article | 28 October 2021 Presentation + Paper

Stria measurement using wave front phase imaging on a transparent plate

Juan M. Trujillo-Sevilla, Oscar Casanova-González, Miriam Velasco-Ocaña, Sabato Ceruso, Ricardo Oliva-García, Óscar Gómez-Cárdenes, Javier Martín-Hernández, Alex Roqué-Velasco, Alvaro Pérez-García, José Manuel Rodríguez-Ramos, Jan Gaudestad

Proceedings Volume 11889, 118891I (2021) https://doi.org/10.1117/12.2605328

KEYWORDS: Wavefronts, Glasses, Phase imaging, Spatial frequencies, Refractive index, Manufacturing, Visualization, Reflectivity, Optical sensors, Light wave propagation

Read Abstract +

Proceedings Article | 12 October 2021 Poster + Presentation + Paper

New metrology technique for measuring wafer geometry on a full 300mm silicon wafer

Juan Trujillo-Sevilla, Óscar Casanova-González, Miriam Velasco-Ocaña, Sabato Ceruso, Ricardo Oliva-García, Óscar Gómez-Cárdenes, Javier Martín-Hernández, Alex Roqué-Velasco, Álvaro Pérez-García, Jose Manuel Ramos-Rodríguez, Jan Gaudestad

Proceedings Volume 11854, 118541B (2021) https://doi.org/10.1117/12.2605516

KEYWORDS: Semiconducting wafers, Silicon, Photovoltaics, Gaussian filters, Data acquisition, Wavefronts, Metrology, Cameras, Overlay metrology, Image sensors

Read Abstract +

Proceedings Article | 22 April 2020 Presentation + Paper

Free view point generation based on depth maps computed by a single camera

Ricardo Oliva-García, Jan Gaudestad, Javier Martin-Hernandez, Ángela Hernández-Delgado, Óscar Gómez-Cárdenes, Jonas Lüke, José M. Rodríguez-Ramos

Proceedings Volume 11402, 114020P (2020) https://doi.org/10.1117/12.2558063

KEYWORDS: Cameras, Matrices, Head, 3D image processing, Image interpolation

Read Abstract +

Proceedings Article | 20 March 2020 Paper

High speed roughness measurement on blank silicon wafers using wave front phase imaging

J. M. Trujillo-Sevilla, J. M. Rodríguez-Ramos, J. Gaudestad

Proceedings Volume 11325, 113252W (2020) https://doi.org/10.1117/12.2547406

KEYWORDS: Semiconducting wafers, Silicon, Wafer-level optics, Wavefronts, Signal to noise ratio, Image resolution, Image sensors, Cameras, Linear filtering, Robotics

Read Abstract +

Proceedings Article | 2 March 2020 Presentation + Paper

Wave front phase imaging of wafer geometry using high pass filtering to reveal nanotopography

J. M. Trujillo-Sevilla, J. M. Ramos-Rodríguez, J. Gaudestad

Proceedings Volume 11287, 112870W (2020) https://doi.org/10.1117/12.2547405

KEYWORDS: Semiconducting wafers, Silicon, Wafer-level optics, Wavefronts, Image resolution, Image sensors, Signal to noise ratio, Cameras, Linear filtering, Manufacturing

Read Abstract +

Proceedings Article | 19 February 2020 Paper

New high-resolution wave ophthalmic instrument for the characterizing ocular optics

Sergio Bonaque-González, Juan M. Trujillo-Sevilla, Oscar Casanova-González, David Carmona-Ballester, Miguel Sicilia-Cabrera, Sabato Ceruso, Jan Gaudestad, José M. Rodríguez-Ramos

Proceedings Volume 11218, 112181W (2020) https://doi.org/10.1117/12.2548595

KEYWORDS: Sensors, Eye, Wavefront sensors, Image resolution, Wavefronts, Error analysis, Ophthalmology, Distance measurement, Actuators, Diagnostics

Read Abstract +