Prof. Peter M. Smowton Profile

Prof. Peter M. Smowton

Professor at Cardiff Univ

SPIE Involvement:

Conference Chair | Conference Program Committee | Editor | Author

Publications (58)

Proceedings Article | 13 March 2024 Presentation

Presentation

Low-loss III-IV photonics and high efficiency grating couplers incorporating low-index AlOx layers

Fwoziah Albeladi, Sara-Jayne Gillgrass, Josie Nabialek, Chris Hodges, Mingchu Tang, Huiwen Deng, Huiyun Liu, Samuel Shutts, Peter Smowton

Proceedings Volume PC12889, PC128890K (2024) https://doi.org/10.1117/12.3002203

KEYWORDS: Optical gratings, Photonics, Waveguides, Semiconductor lasers, Oxidation, Optics manufacturing, Wave propagation, Silicon photonics, Photonic integrated circuits, Optical design

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Proceedings Article | 13 March 2024 Presentation

Presentation

Effect of Ge-substrate thickness on 940-nm VCSEL performance

Sara-Jayne Gillgrass, Craig Allford, Jack Baker, Andrew Johnson, Iwan Davies, Samuel Shutts, Peter Smowton

Proceedings Volume PC12904, PC1290408 (2024) https://doi.org/10.1117/12.3001658

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Manufacturing, Reliability, Photovoltaics, Industry, High volume manufacturing, Gallium arsenide, Fabrication, Chip manufacturing

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Proceedings Article | 13 March 2024 Presentation

Presentation

Selective-area intermixing for implementing InAs QDs based active-passive integration for photonic integrated circuits

Abigail Enderson, Pawan Mishra, Zhongming Cao, Fwoziah Albeladi, Sara-Jayne Gillgrass, Bogdan-Petrin Ratiu, Nianhua Peng, Mingchu Tang, Huiyun Liu, Samuel Shutts, Peter Smowton

Proceedings Volume PC12905, PC1290502 (2024) https://doi.org/10.1117/12.3002710

KEYWORDS: Photonic integrated circuits, Indium arsenide, Quantum circuit implementation, Crystals, Absorption, Waveguides, Tolerancing, Thermography, Quenching, Quantum enhancement

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Proceedings Article | 13 March 2024 Presentation

Presentation

InAs quantum dot-based one- and two-port multimode interference reflectors for integrated photonic devices: design, fabrication, and evaluation

Fwoziah Albeladi, Sara-Jayne Gillgrass, Josie Travers-Nabialek, Pawan Mishra, Richard Forrest, Craig Allford, Tahani Albiladi, Samuel Shutts, Peter Smowton

Proceedings Volume PC12905, PC129050G (2024) https://doi.org/10.1117/12.3003224

KEYWORDS: Reflectors, Quantum interference, Quantum devices, Integrated photonics, Fabrication, Multimode interference devices, Indium arsenide, Design and modelling, Mirrors, Quantum ground state

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Proceedings Article | 17 March 2023 Presentation

Presentation

InAs quantum dots emitting in C and L-wavelength band

Samuel Shutts, Zhongming Cao, Bogdan Ratiu, Oumaima Abouzaid, Maryam Alsayyadi, Josie Nabialek, Ben Salmond, Harry Gordon-Moys, Craig Allford, Sara-Jayne Gillgrass, Qiang Li, Peter Smowton

Proceedings Volume PC12440, PC1244003 (2023) https://doi.org/10.1117/12.2656101

KEYWORDS: Indium arsenide, Quantum dots, Temperature metrology, Silicon, Semiconductor lasers, Hybrid silicon lasers, Target detection, Pulsed laser operation, Methane, Metalorganic chemical vapor deposition

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Proceedings Article | 17 March 2023 Presentation

Presentation

1.3-μm InAs QD lasers for integrated photonics

Lydia Jarvis, Ben Maglio, Sara Gillgrass, Craig Allford, Fwoziah Albeladi, Abigail Enderson, Sam Shutts, Huiwen Deng, Mingchu Tang, Huiyun Liu, Peter Smowton

Proceedings Volume PC12440, PC1244001 (2023) https://doi.org/10.1117/12.2656077

KEYWORDS: Integrated photonics, Indium arsenide, Quantum dots, Quantum dot lasers, Modulation, Laser damage threshold, Tolerancing, Silicon, Semiconductor lasers

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Proceedings Article | 17 March 2023 Presentation

Presentation

Design and characterisation of VCSELs for atomic sensor applications

Samuel Shutts, Curtis Hentschel, Sara-Jayne Gillgrass, James Meiklejohn, Craig Allford, Jack Baker, Josie Nabialek, Denise Powell, Witold Chalupczak, Mohsin Haji, Wyn Meredith, Peter Smowton

Proceedings Volume PC12439, PC1243907 (2023) https://doi.org/10.1117/12.2650495

KEYWORDS: Vertical cavity surface emitting lasers, Sensors, Quantum wells, Optical pumping, Ytterbium, Temperature metrology, Strontium, Spectroscopes, Second-harmonic generation, Mirrors

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Proceedings Article | 17 March 2023 Presentation

Presentation

Quick fabrication VCSEL characterisation for rapid assessment of epitaxy design and growth

Craig Allford, Jack Baker, Sara-Jayne Gillgrass, James Meiklejohn, Denise Powell, Wyn Meredith, Tracy Sweet, Iwan Davies, Samuel Shutts, Peter Smowton

Proceedings Volume PC12439, PC124390C (2023) https://doi.org/10.1117/12.2648742

KEYWORDS: Vertical cavity surface emitting lasers, Epitaxy, Semiconducting wafers, Wavelength tuning, Wafer-level optics, Temperature metrology, Structural design, Spectrographs, Oxidation, Integrating spheres

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Proceedings Article | 17 March 2023 Presentation

Presentation

Characterisation of 200 mm GaAs and Ge substrate VCSELs for high-volume manufacturing

Sara-Jayne Gillgrass, Craig Allford, Andrew Johnson, Jack Baker, Iwan Davies, Samuel Shutts, Peter Smowton

Proceedings Volume PC12439, PC124390B (2023) https://doi.org/10.1117/12.2648442

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, High volume manufacturing, Manufacturing, Gallium arsenide, Germanium, Three dimensional sensing, Reliability, Crystals

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Proceedings Article | 17 March 2023 Presentation

Presentation

Evaluation of 1.3-μm-region emitting InAs QD edge-emitting lasers over 150-mm substrates

Sara-Jayne Gillgrass, Craig Allford, Mukul Debnath, Andrew Clark, Peter Smowton

Proceedings Volume PC12440, PC1244002 (2023) https://doi.org/10.1117/12.2646136

KEYWORDS: Indium arsenide, Semiconducting wafers, Laser applications, Ultrafast phenomena, Tunable lasers, Tolerancing, Three dimensional sensing, Silicon, Semiconductor lasers, Quantum dot lasers

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Proceedings Article | 25 May 2022 Presentation

Presentation

Impact of strain-induced bow on the performance of VCSELs on 150mm GaAs- and Ge-substrate wafers

Jack Baker, Sara Gillgrass, Tomas Peach, Craig Allford, J. Iwan Davies, Andrew Johnson, Andrew Joel, Sung Wook Lim, Samuel Shutts, Peter Smowton

Proceedings Volume PC12141, PC1214108 (2022) https://doi.org/10.1117/12.2624492

KEYWORDS: Semiconducting wafers, Vertical cavity surface emitting lasers, Gallium arsenide, Germanium, Oxides, Oxidation, Manufacturing, Surface finishing, Statistical analysis, Polishing

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Proceedings Article | 9 March 2022 Presentation

Presentation

Active region doping strategies in O-band InAs/GaAs quantum-dot lasers

Lydia Jarvis, Ben Maglio, Samuel Shutts, Zhibo Li, Huiwen Deng, Mingchu Tang, Huiyun Liu, Peter Smowton

Proceedings Volume PC12021, PC1202104 (2022) https://doi.org/10.1117/12.2614632

KEYWORDS: Doping, Quantum dot lasers, Indium arsenide, Gallium arsenide, Modulation, Temperature metrology, Photonics, Molecular beam epitaxy, Luminescence, Lithium

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Proceedings Article | 9 March 2022 Presentation

Presentation

Sub-mA threshold current quick fabrication VCSELs for characterisation of epitaxial material over 150mm wafers

Jack Baker, Craig Allford, Sara Gillgrass, Tomas Peach, Iwan Davies, Samuel Shutts, Peter Smowton

Proceedings Volume PC12020, PC1202007 (2022) https://doi.org/10.1117/12.2610179

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Measurement devices, Reflectometry, Oxides, Oxidation, Bridges

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Proceedings Article | 6 October 2021 Presentation

Presentation

Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy

Xuezhe Yu, Keshuang Li, Junjie Yang, Ying Lu, Zizhuo Liu, Mingchu Tang, Pamela Jurczak, Jae-Seong Park, Huiwen Deng, Hui Jia, Manyu Dang, Ana Sanchez, Richard Beanland, Wei Li, Xiaodong Han, Jinchuan Zhang, Huan Wang, Fengqi Liu, Siming Chen, Alwyn Seeds, Peter Smowton, Huiyun Liu

Proceedings Volume 11880, 118800H (2021) https://doi.org/10.1117/12.2601451

KEYWORDS: Silicon, Gallium arsenide, Molecular beam epitaxy, Photonic integrated circuits, Interfaces, Indium arsenide, Epitaxy, CMOS technology, Annealing

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Proceedings Article | 5 March 2021 Presentation

Presentation

Quick fabrication of 940nm emitting VCSEL arrays for commercial wafer characterization

Jack Baker, David Hayes, Tomas Peach, Sara Gillgrass, Craig Allford, Curtis Hentschel, Angela Sobiesierski, Connie Eng, Saleem Shabbir, Stuart Thomas, Clive Meaton, Aidan Daly, Tracy Sweet, Iwan Davies, Samuel Shutts, Peter Smowton

Proceedings Volume 11704, 1170408 (2021) https://doi.org/10.1117/12.2578365

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Thermal oxidation, Manufacturing, Calibration

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Proceedings Article | 5 March 2021 Presentation

Presentation

Temperature dependent optical gain and absorption of InAs quantum dash laser on silicon emitting at 1.55 μm

Zhibo Li, Samuel Shutts, Ying Xue, Wei Luo, Kei May Lau, Peter Smowton

Proceedings Volume 11705, 117050L (2021) https://doi.org/10.1117/12.2582413

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Proceedings Article | 5 March 2021 Presentation

Presentation

150mm full wafer fabrication and characterization of 940nm emitting VCSELs for high-volume manufacture

David Hayes, Tomas Peach, Jack Baker, Sara-Jayne Gillgrass, Craig Allford, Angela Sobiesierski, Connie Eng, Saleem Shabbir, Stuart Thomas, Curtis Hentschel, Clive Meaton, Samuel Shutts, Aidan Daly, Tracy Sweet, Iwan Davies, Peter Smowton

Proceedings Volume 11704, 1170406 (2021) https://doi.org/10.1117/12.2578592

KEYWORDS: Semiconducting wafers, Vertical cavity surface emitting lasers, Manufacturing, Wafer testing, Thermal oxidation, Reflectivity, Photoresist materials, Oxides, Electro optics, Analytical research

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Proceedings Article | 20 April 2017 Presentation

Presentation

Rapid fabrication and characterisation techniques for VCSELs (Conference Presentation)

Lewis Kastein, Peter Smowton, Graham Clarke

Proceedings Volume 10122, 101220D (2017) https://doi.org/10.1117/12.2255947

KEYWORDS: Fabrication, Vertical cavity surface emitting lasers, Reliability, Ultrafast phenomena, Mirrors, Convolution, Absorption, Semiconducting wafers, Quantum wells, Current controlled current source

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Proceedings Article | 20 April 2017 Presentation

Presentation

Novel coupled-cavity sensing mechanism for on-chip detection of microparticles (Conference Presentation)

Sara-Jayne Gillgrass, Robert Thomas, Peter Smowton

Proceedings Volume 10123, 101230S (2017) https://doi.org/10.1117/12.2253613

KEYWORDS: Refractive index, Sensors, Laser applications, Telecommunications, Light emitting diodes, Optical sensing, Sensing systems, Laser damage threshold, Particles, Capillaries

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Proceedings Article | 20 April 2017 Presentation

Presentation

3D micro-lenses for free space intra-chip coupling in photonic-integrated circuits (Conference Presentation)

Robert Thomas, Gwilym Williams, Sam Ladak, Peter Smowton

Proceedings Volume 10123, 101230W (2017) https://doi.org/10.1117/12.2252213

KEYWORDS: 3D metrology, Semiconductor lasers, Free space, Photonic integrated circuits, Optical components, Optical sensing, Lenses, Integrated optics, Optical computing, Silicon

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Proceedings Article | 15 March 2016 Paper

Paper

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

Jonathan Orchard, Chris Woodhead, Samuel Shutts, Jiang Wu, Angela Sobiesierski, Rob Young, Richard Beanland, Huiyun Liu, Peter Smowton, David Mowbray

Proceedings Volume 9758, 975809 (2016) https://doi.org/10.1117/12.2209693

KEYWORDS: Quantum dots, Luminescence, Silicon, Instrument modeling, Indium arsenide, Laser applications, Silicon photonics, Integrated optics, Electronic components, Data transmission, Annealing, Gallium arsenide, Semiconductor lasers, Laser damage threshold, Interfaces

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Proceedings Article | 10 March 2015 Paper

Paper

Optical bandwidth broadening in two-section passively mode-locked InAs quantum dot lasers in the random population regime

P. Finch, M. Hutchings, P. Blood, P. Smowton, Angela Sobiesierski, I. O'Driscoll

Proceedings Volume 9382, 93820C (2015) https://doi.org/10.1117/12.2079352

KEYWORDS: Mode locking, Quantum dots, Indium arsenide, Gallium arsenide, Thermography, Quantum dot lasers, Phonons, Semiconductor lasers, Absorption, Ultrafast phenomena

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Proceedings Article | 10 March 2015 Paper

Paper

Effects of temperature and difference-wavelength on mode stability in dual-λ QD lasers

Samuel Shutts, Peter Smowton, Andrey Krysa

Proceedings Volume 9382, 93820J (2015) https://doi.org/10.1117/12.2085511

KEYWORDS: Quantum wells, Aluminium gallium indium phosphide, Etching, Waveguides, Quantum dots, Transmission electron microscopy, Neodymium, Measurement devices, Temperature metrology, Indium gallium phosphide

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Proceedings Article | 10 March 2015 Paper

Paper

Effect of thermal carrier spreading on the temperature dependence of threshold current in InP quantum dot lasers

P. Smowton, S. Elliott, M. Kasim, A. Krysa

Proceedings Volume 9382, 93820F (2015) https://doi.org/10.1117/12.2086985

KEYWORDS: Gallium, Absorption, Laser damage threshold, Thermal effects, Quantum dot lasers, Quantum dots, Semiconductor lasers, Quantum wells, Temperature metrology, Fabry–Perot interferometers

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Proceedings Article | 27 February 2014 Paper

Paper

Femtosecond pulse generation from a two-section mode-locked quantum-dot laser using random population

P. Finch, P. Blood, P. Smowton, A. Sobiesierski, R. Gwilliam, I. O'Driscoll

Proceedings Volume 9002, 90020E (2014) https://doi.org/10.1117/12.2039130

KEYWORDS: Mode locking, Picosecond phenomena, Temperature metrology, Absorption, Phonons, Quantum dots, Pulsed laser operation, Quantum dot lasers, Optical testing, Oscillators

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Proceedings Article | 4 March 2013 Paper

Paper

Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers

Stella Elliott, Martin Hempel, Sam Shutts, Ute Zeimer, Peter Smowton, Jens Tomm

Proceedings Volume 8640, 86401H (2013) https://doi.org/10.1117/12.2008319

KEYWORDS: Quantum wells, Gallium arsenide, Quantum dots, Gallium, Thermography, Absorption, Semiconductor lasers, Optical damage, Mirrors, Quantum dot lasers

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Proceedings Article | 9 February 2012 Paper

Paper

Strained confinement layers in InP quantum dot lasers

Stella Elliott, Peter Smowton, Andrey Krysa

Proceedings Volume 8277, 827711 (2012) https://doi.org/10.1117/12.913613

KEYWORDS: Gallium, Absorption, Cladding, Gallium arsenide, Aluminum, Laser damage threshold, Quantum dots, Liquid crystal lasers, Semiconducting wafers, Quantum dot lasers

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Proceedings Article | 17 February 2011 Paper

Paper

Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers

S. Shutts, G. Edwards, S. Elliott, P. Smowton, A. Krysa

Proceedings Volume 7953, 795308 (2011) https://doi.org/10.1117/12.876454

KEYWORDS: Etching, Reflectivity, Quantum wells, Laser damage threshold, Temperature metrology, Absorption, Anisotropic etching, Distributed Bragg reflectors, Quantum dots, Reactive ion etching

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Proceedings Article | 17 February 2011 Paper

Paper

The lateral ambipolar diffusion length in quantum dot lasers

A. Sobiesierski, D. Naidu, P. Smowton

Proceedings Volume 7953, 795306 (2011) https://doi.org/10.1117/12.874474

KEYWORDS: Diffusion, Quantum wells, Laser damage threshold, Quantum dots, Temperature metrology, Gallium arsenide, Quantum dot lasers, Transparency, Semiconductor lasers, Particle filters

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Proceedings Article | 12 February 2010 Paper

Paper

Manipulation of optical modes in quantum dot laser diodes by selective oxidation of high aluminum content AlGaAs layers

G. Michell, P. Smowton, H. Summers

Proceedings Volume 7616, 76161T (2010) https://doi.org/10.1117/12.846843

KEYWORDS: Near field, Near field optics, Saturable absorption, Aluminum, Lithium, Data modeling, Quantum optics, Quantum dot lasers, Diodes, Oxidation

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Proceedings Article | 12 February 2010 Paper

Paper

Random population of InAs-GaAs quantum dots

Ian O'Driscoll, Matthew Hutchings, Peter Smowton, Peter Blood

Proceedings Volume 7616, 761605 (2010) https://doi.org/10.1117/12.845843

KEYWORDS: Absorption, Quantum dots, Temperature metrology, Data modeling, Process control, Calibration, Stars, Laser damage threshold, Semiconductor lasers, Quantum wells

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Proceedings Article | 6 February 2009 Paper

Paper

Self pulsing quantum dot lasers for optical coherence tomography

Haoling Liu, Peter Smowton, Gareth Edwards, Wolfgang Drexler, Huw Summers

Proceedings Volume 7230, 72300A (2009) https://doi.org/10.1117/12.813504

KEYWORDS: Optical coherence tomography, Light sources, Quantum dot lasers, Pulsed laser operation, Gallium arsenide, Quantum dots, Semiconductor lasers, Waveguide lasers, Modes of laser operation

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Proceedings Article | 6 February 2009 Paper

Paper

Higher power density limit at COMD in GaInP/AlGaInP in quantum dots than in wells

Stella Elliott, Peter Smowton, Gareth Edwards, Graham Berry, Andrey Krysa

Proceedings Volume 7230, 72300X (2009) https://doi.org/10.1117/12.809341

KEYWORDS: Quantum wells, Temperature metrology, Quantum dots, Semiconductor lasers, High power lasers, Scanning electron microscopy, Aluminium gallium indium phosphide, Pulsed laser operation, Absorption, Oxides

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Proceedings Article | 22 March 2007 Paper

Paper

Maximising the gain: optimizing the carrier distribution in InGaAs quantum dot lasers

Peter Smowton, Ian Sandall, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6468, 646817 (2007) https://doi.org/10.1117/12.702733

KEYWORDS: Absorption, Semiconducting wafers, Transparency, Quantum dots, Indium gallium arsenide, Quantum dot lasers, Gallium arsenide, Temperature metrology, Doping, Laser damage threshold

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Proceedings Article | 22 February 2006 Paper

Paper

Characterisation of modulation doped quantum dot lasers

Peter Smowton, Ian Sandall, Craig Walker, John Thomson, Angela Sobiesierski, Tom Badcock, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6133, 61330T (2006) https://doi.org/10.1117/12.650682

KEYWORDS: Doping, Transparency, Absorption, Quantum dots, Modulation, Quantum wells, Laser damage threshold, Gallium, Semiconductor lasers, Gallium arsenide

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Proceedings Article | 28 April 2005 Paper

Paper

The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes

J. Thomson, I. Pope, P. Smowton, P. Blood, R. Lynch, G. Hill, T. Wang, P. Parbrook

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.591897

KEYWORDS: Light emitting diodes, Temperature metrology, Quantum wells, Gallium nitride, Lithium, Gallium, Optoelectronic devices, Magnesium, Americium, Annealing

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Proceedings Article | 28 April 2005 Paper

Paper

Time evolution of piezoelectic field screening in InGaN quantum wells

John Thomson, Iain Brown, Peter Smowton, Peter Blood, Weng Chow, A. Mark Fox, Santiago Olaizola Izquierdo

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.591898

KEYWORDS: Quantum wells, Picosecond phenomena, Luminescence, Laser damage threshold, Indium gallium nitride, Gallium nitride, Physics, Indium, Optical pumping, Astronomy

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Proceedings Article | 1 April 2005 Paper

Paper

Growth and characterization of multiple layer quantum dot lasers

Peter Smowton, Craig Walker, Ian Sandall, Ian Sellers, David Mowbray, Hui-Yun Liu, Marina Gutierrez, Mark Hopkinson

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.593278

KEYWORDS: Gallium arsenide, Absorption, Gallium, Quantum dots, Transmission electron microscopy, Quantum wells, Multilayers, Quantum dot lasers, Laser damage threshold, Semiconductor lasers

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Proceedings Article | 1 September 2004 Paper

Paper

Mode structure of quantum dot semiconductor lasers

Yann Tanguy, Jan Muszalski, John Houlihan, Guillaume Huyet, Emma Pearce, Peter Smowton, Mark Hopkinson

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545473

KEYWORDS: Near field, Quantum dots, Semiconductor lasers, Quantum dot lasers, Refractive index, Modulation, Thermal effects, Continuous wave operation, Near field optics

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Proceedings Article | 18 June 2004 Paper

Paper

Energy distributions of carriers in quantum dot laser structures

Simon Osborne, Peter Blood, Peter Smowton, Julie Lutti, Y. Xin, Andreas Stintz, Diana Huffaker, Luke Lester

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.540314

KEYWORDS: Absorption, Waveguides, Quantum dot lasers, Indium arsenide, Quantum dots, Electrons, Physics, Semiconductor lasers, Transparency, Blood

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Proceedings Article | 11 May 2004 Paper

Paper

Carrier distribution, spontaneous emission, and gain in self-assembled quantum dot lasers

Peter Smowton, Emma Pearce, Julie Lutti, Daniel Matthews, Huw Summers, Gareth Lewis, Peter Blood, Mark Hopkinson, Andrey Krysa

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.530429

KEYWORDS: Quantum dots, Indium gallium arsenide, Aluminum, Gallium, Quantum dot lasers, Absorption, Quantum wells, Gallium arsenide, Temperature metrology, Indium gallium phosphide

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Proceedings Article | 11 May 2004 Paper

Paper

Saturable absorber characteristics in quantum dot lasers

Daniel Matthews, Gareth Edwards, Huw Summers, Peter Smowton

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.528789

KEYWORDS: Quantum dots, Quantum wells, Quantum dot lasers, Absorption, Q switches, Semiconductor lasers, Temperature metrology, Lithium, Laser damage threshold, Mode locking

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Proceedings Article | 25 July 2003 Paper

Paper

Many-body effects in quantum dot lasers

Hans Schneider, Weng Chow, Peter Smowton, Emma Pearce, Stephan Koch

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.482334

KEYWORDS: Quantum dots, Quantum wells, Refractive index, Quantum dot lasers, Polarization, Physics, Semiconductor lasers, Optical properties, Absorption, Indium arsenide

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Proceedings Article | 3 July 2003 Paper

Paper

Coupled multiple quantum well 650-nm emitting GaInP laser diodes

Angela Sobiesierski, Gareth Lewis, Peter Smowton, Peter Blood, Gareth Jones, Stephen Bland

Proceedings Volume 4995, (2003) https://doi.org/10.1117/12.475785

KEYWORDS: Quantum wells, Semiconductor lasers, Waveguides, Aluminum, Indium gallium phosphide, Digital video discs, Polarization, Calibration, Gallium, Laser damage threshold

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Proceedings Article | 22 May 2002 Paper

Paper

Gain characteristics of GaInP quantum well laser structures

Gareth Lewis, John Thomson, Peter Smowton, P. Hulyer, Peter Blood

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467933

KEYWORDS: Quantum wells, Polarization, Calibration, Indium gallium phosphide, Spectral calibration, Quantum efficiency, Absorption, Transparency, Semiconductor lasers, Laser damage threshold

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Proceedings Article | 19 October 2001 Paper

Paper

Temperature dependence of gain in multiple-layer quantum dots

Yongqiang Ning, Xin Gao, Lijun Wang, Peter Smowton, Peter Blood

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.445007

KEYWORDS: Quantum dots, Multilayers, Absorption, Gallium, Cladding, Gallium arsenide, Waveguides, Aluminum, Temperature metrology, Astronomical imaging

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Proceedings Article | 19 October 2001 Paper

Paper

Dependence of threshold current density on the stacked quantum dot layers

Yongqiang Ning, Xin Gao, Yun Liu, Lijun Wang, Peter Smowton, Peter Blood

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.445005

KEYWORDS: Quantum dots, Laser damage threshold, Waveguides, Gallium, Semiconductor lasers, Gallium arsenide, Quantum dot lasers, Oxides, Aluminum, Astronomical imaging

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Proceedings Article | 16 October 2001 Paper

Paper

Farfield characteristics of InGaAs/GaAs quantum dot laser

Yongqiang Ning, Xin Gao, Lijun Wang, Peter Smowton, Peter Blood

Proceedings Volume 4602, (2001) https://doi.org/10.1117/12.445712

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Proceedings Article | 9 July 2001 Paper

Paper

Comparison of experimental and theoretical optical properties of GaInP lasers

Peter Smowton, Weng Chow, Gareth Lewis, Peter Blood, Huw Summers, John Thomson

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432567

KEYWORDS: Quantum wells, Absorption, Solids, Gallium, Indium gallium phosphide, Aluminum, Electrons, Data modeling, Optical properties, Laser damage threshold

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Proceedings Article | 14 July 2000 Paper

Paper

Measurement of optical gain and Fermi level separation in semiconductor structures

John Thomson, Huw Summers, P. Hulyer, Peter Smowton, Peter Blood

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391422

KEYWORDS: Optical testing, Semiconductors, Quantum wells, Transparency, Waveguides, Semiconductor lasers, Magnetism, Calibration, Absorption, Polarization

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Proceedings Article | 6 August 1999 Paper

Paper

Carrier transport in AlGaInP laser structures

Peter Blood, Scott Wood, Peter Smowton, Catherine Molloy, Chris Button

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356906

KEYWORDS: Electrons, Cladding, Quantum wells, Diffusion, Waveguides, Computer simulations, Laser damage threshold, Semiconductor lasers, Time metrology, Aluminium gallium indium phosphide

Proceedings Article | 7 July 1998 Paper

Paper

Impact of structural nonuniformity on the operation of AlGaInP lasers at high compressive strain

Paul Mogensen, Peter Smowton, Peter Blood, Steve Hall, Ursel Bangert, Philip Dawson

Proceedings Volume 3283, (1998) https://doi.org/10.1117/12.316694

KEYWORDS: Quantum wells, Waveguides, X-rays, Gallium, Absorption, Laser damage threshold, Photomicroscopy, Transmission electron microscopy, Laser scattering, Scattering

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Proceedings Article | 6 June 1997 Paper

Paper

Simulation of GaInP laser diode structure

Peter Blood, Damian Foulger, Peter Smowton, Phil Mawby

Proceedings Volume 2994, (1997) https://doi.org/10.1117/12.275623

KEYWORDS: Quantum wells, Cladding, Optical simulations, Semiconductor lasers, Quantum efficiency, Waveguides, Laser damage threshold, Internal quantum efficiency, Heterojunctions, Indium gallium phosphide

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Proceedings Article | 2 May 1997 Paper

Paper

New approach to blue-shifting asymmetric quantum wells

Craig Cooper, Peter Blood, Catherine Molloy, Xiaoyuan Chen, David Westwood, Peter Smowton, David Somerford

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273787

KEYWORDS: Quantum wells, Gallium arsenide, Doping, Electrons, Laser damage threshold, Interfaces, Waveguides, Electro optics, Luminescence, Electroluminescence

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Proceedings Article | 2 May 1997 Paper

Paper

AlxGayIn1-x-yAs/AlGaAs quantum well lasers at 670 to 750 nm

Peter Smowton, Peter Blood, Paul Mogensen, John Roberts

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273783

KEYWORDS: Quantum wells, Cladding, Temperature metrology, Aluminum, Indium gallium phosphide, Waveguides, Gallium, Indium, Laser damage threshold, Refractive index

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Proceedings Article | 1 May 1996 Paper

Paper

Critical issues in laser diode calculations

Peter Blood, Paul Rees, Craig Cooper, Peter Smowton

Proceedings Volume 2693, (1996) https://doi.org/10.1117/12.238980

KEYWORDS: Gallium arsenide, Transparency, Indium gallium phosphide, Gallium nitride, Quantum wells, Semiconductor lasers, Scattering, Laser damage threshold, Optical simulations, Cladding

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Proceedings Article | 12 April 1996 Paper

Paper

Carrier distributions and leakage in (AlGa)InP visible emitting lasers

Peter Blood, Peter Smowton, Damian Foulger

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237645

KEYWORDS: Laser damage threshold, Electrons, Quantum wells, Cladding, Temperature metrology, Optical simulations, Waveguides, Indium gallium phosphide, Process control, Bulk lasers

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Proceedings Article | 1 June 1994 Paper

Paper

Optimization of 670-nm strained quantum well laser diodes

Peter Smowton, Huw Summers, Paul Rees, Peter Blood

Proceedings Volume 2148, (1994) https://doi.org/10.1117/12.176614

KEYWORDS: Quantum wells, Gallium, Waveguides, Laser damage threshold, Cladding, Semiconductor lasers, Scattering, Laser optics, Optical interconnects, Polymer multimode waveguides

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Showing 5 of 58 publications

Proceedings Volume Editor (17)

SPIE Conference Volume | 26 March 2024

Novel In-Plane Semiconductor Lasers XXIII

SPIE Conference Volume | 21 April 2023

Novel In-Plane Semiconductor Lasers XXII

SPIE Conference Volume | 28 March 2022

Novel In-Plane Semiconductor Lasers XXI

SPIE Conference Volume | 16 April 2021

Novel In-Plane Semiconductor Lasers XX

SPIE Conference Volume | 18 March 2020

Novel In-Plane Semiconductor Lasers XIX

Showing 5 of 17 publications

Conference Committee Involvement (27)

Novel In-Plane Semiconductor Lasers XXIV

27 January 2025 | San Francisco, California, United States

Semiconductor Lasers and Laser Dynamics XI

9 April 2024 | Strasbourg, France

Novel In-Plane Semiconductor Lasers XXIII

30 January 2024 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XXII

31 January 2023 | San Francisco, California, United States

Semiconductor Lasers and Laser Dynamics X

5 April 2022 | Strasbourg, France

Novel In-Plane Semiconductor Lasers XXI

25 January 2022 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XX

6 March 2021 | Online Only, California, United States

Semiconductor Lasers and Laser Dynamics IX

6 April 2020 | Online Only, France

Novel In-Plane Semiconductor Lasers XIX

3 February 2020 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XVIII

4 February 2019 | San Francisco, California, United States

Semiconductor Lasers and Laser Dynamics

23 April 2018 | Strasbourg, France

Novel In-Plane Semiconductor Lasers XVII

29 January 2018 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XVI

30 January 2017 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XV

15 February 2016 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XIV

9 February 2015 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XIII

3 February 2014 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XII

4 February 2013 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers XI

23 January 2012 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers X

24 January 2011 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers IX

25 January 2010 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers VIII

26 January 2009 | San Jose, California, United States

Novel In-Plane Semiconductor Lasers VII

21 January 2008 | San Jose, California, United States

Novel In-Plane Semiconductor Lasers VI

22 January 2007 | San Jose, California, United States

Novel In-Plane Semiconductor Lasers V

23 January 2006 | San Jose, California, United States

Novel In-Plane Semiconductor Lasers IV

24 January 2005 | San Jose, California, United States

Novel In-Plane Semiconductor Lasers III

26 January 2004 | San Jose, CA, United States

Novel In-Plane Semiconductor Lasers II

27 January 2003 | San Jose, CA, United States

Showing 5 of 27 Conference Committees

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