There are currently lots of research activities concerning explosive hazards detection, and stand-off detection of explosives is in main focus. The reason for this interest is the occurrence of terrorist attacks on the civilian society involving Improvised Explosives Devices (IED). Laser-based spectroscopies are the only currently viable techniques that can be utilized to detect trace amounts of explosives at stand-off distances. In particular, Raman Spectroscopy (RS) has been shown to be effective for stand-off detection and has the ability to both detect and identify explosive materials. Raman spectroscopy is virtually instantaneous, non-destructive in nature and provides high selectivity. The traditional Raman spectrometer utilizes continuous lasers and CCDs to detection the scattering signal, which greatly limits the application of Raman spectroscopy in the stand-off detection of explosive hazards due to the weak signal, strong background fluorescence, ambient light interference, and long analysis time. Time-gated Raman spectroscopies are based on ultrafast pulsed lasers and time-resolved single-photon detection techniques. Through the time-gated method, the Raman signal intensity can be greatly improved, and the influence of fluorescence and environmental light can be effectively suppressed. In this work, the time-gated Raman system utilizing frequency-doubled Nd:YAG lasers at 532 nm excitation was developed. The Cassegrain telescope was coupled to the Raman spectrometer using a fiber optics cable, and notch filter was used to reject Rayleigh scattering light. The Raman scattered light was collected by a telescope and then transferred via fiber optic to spectrometer and finally directed into Intensified CMOS (ICMOS) detector. The applications of time-gated Raman spectroscopy in stand-off detection of hazardous explosives have been performed. The Raman spectra of DNT, TNT, RDX and NaNO3 at a stand-off distance of 50 m have been identified with a detection limit of 1 mg/cm2.
With the increase of output power, more heat generation and higher operation current have become important issues, which affect the electrical-optical performance and reliability of high power semiconductor lasers. For the past several years, high power semiconductor laser chips utilizing double or triple quantum wells have been developed to achieve higher output power. However, the operation current of diode laser chips with double or triple quantum wells is much higher than that with single quantum well. Diode laser chips with double or triple quantum wells could only operate at a much lower duty cycle. In this paper, a compact quasi-continuous wave (QCW) high power semiconductor laser array based on dual-chip integration techniques has been developed. For this packaging structure, two diode laser bars were welded above and below a micro-channel heat sink, without significant increase in volume. By means of this integration method, the output power of the semiconductor laser could reach kilowatt-level at a lower operation current. The thermal behavior of the semiconductor laser array with different operation parameters was carried out using finite element method. The structure parameters of semiconductor laser array based on dual-chip integration were optimized and characterized. The output power is 1485 W operated at a current of 700 A and the maximum electro-optical efficiency is 75%, which is the record-high level for a high power semiconductor laser array.
Improvised explosive devices (IED) and homemade explosives (HMEs) have become the preferred choice for terrorists and insurgents. It’s a challenge to develop the techniques to detect explosive hazards at standoff distances. In this paper, a standoff UV Raman spectrum detection system for explosive detection was developed, which can realize 2-10m Raman spectrum detection of solid, solution and trace potassium nitrate samples. The relationship between Raman signal intensity (RSI) and pulse energy, detection distance and sample concentration was studied. The experimental results show that the RSI is approximately proportional to the pluse energy and contains nonlinear terms. It has an inverse square relationship with the detection distance and a linear relationship with the sample concentration. The concentration of solution and trace potassium nitrate samples of were successfully predicted at 2m distance, and the root mean square error of prediction (RMSEP) was 11.7 and 6.1, respectively.A simple and effective method for preparing trace potassium nitrate is presented.
High-power diode lasers are widely used in solid-state and fiber laser pumping. The spectral power distribution (SPD) of diode lasers should be perfectly matched with the absorption peak of gain materials. Spectral broadening would lead to a low optical-optical efficiency for the pump lasers. In this paper, a mathematical model based on multiple Gaussian functions was introduced to characterize the SPD of high-power diode lasers. The effect of temperature and the distribution on laser spectrum was specially included in this model. Temperature distribution in high-power diode lasers was calculated via an analytical three-dimensional thermal model. The temperature difference within the active region for diode lasers with different package structures and under different heat dissipation conditions was demonstrated. The intrinsic SPD for diode lasers with uniform junction temperature distribution was obtained from the experimental measurements in which a cold pulse current was injected into the diode lasers. SPDs for diode lasers under different injected currents were illustrated by this spectrum model, and compared to the experimental results for model validation. SPDs for the diode lasers with different chip architectures and packaging structures was calculated by coupling the analytical temperature fields into the spectrum model. Laser spectrum was verified to be independent of current density, but mainly depend on the junction temperature distribution in the experiments by comparing the spectra of the epi-up and epi-down packaged F-Mount single-emitters at same injected current.
High power diode lasers (HPDLs) have been applied in more and more fields, such as material processing, pumping of solid-state lasers and fiber lasers, medical therapy. With the improvement of output power, efficiency and reliability, thermal management has been one of most critical issue for HPDLs. The junction temperature of a diode laser package has critical effects on laser characteristics, affecting wavelength, output power, threshold current, slope efficiency, and operating lifetime. Lower junction temperature is an effective means to achieve high output power and high electrooptical conversion efficiency of diode lasers. In recent years, high-power diode lasers operated at cryogenic temperature have attracted academic interests. Herein, high power diode lasers suitable at cryogenic temperature and a measurement setup at cryogenic temperature have been developed. The optical-electrical performance of microchannel cooled high power diode lasers from 0℃ ~ -60℃ have been studied theoretically and experimentally. The output power increases 18% and the conversion efficiency increases 6.3% from 0 ºC to -60 ºC. The high diode laser bars operated at cryogenic will be applied in pumping high energy lasers in the future.
High power diode laser arrays have found increasing applications in the field of pumping solid-state lasers and fiber lasers. Due to the thermal crosstalk across diode laser arrays and non-uniformity of local flow rate within microchannel cooler, junction temperature distribution becomes inhomogeneous, consequently leading to spectrum broadening and large beam divergence of diode laser pumping sources. In this work, an analytical method and numerical heat transfer based on finite volume method were employed to optimize the inner structure of microchannel cooler so as to obtain low thermal resistance and uniform junction temperature distribution for the diode laser arrays. Three-dimensional numerical models were developed to study the fluid flow and heat transfer of copper stacked microchannel coolers with different dimensions and arrangements of inner channels and fins. More uniform junction temperature distribution of diode laser array package could be achieved by self-heating compensation with specific coolant covering width. These results could provide significant guidance for the design of microchannel coolers of high power diode laser arrays for better performance.
Thermal management is one of the most important factors affecting the performance of high power diode lasers. In this paper, transient thermal behavior of conduction-cooled high power diode lasers has been studied using finite element method. The effects of heat sink geometry, ceramics size on the junction temperature of high power diode laser packages have been analyzed. Based on the simulations, heat dissipation capability of high power diode laser packages is improved and compact conduction-cooled diode laser array packages with 3 bars and 5 bars are fabricated. The power ~ current and spectrum of the optimized high power diode laser array packages at different operation parameters are characterized at different pulse widths, repetition frequencies and TEC temperatures. The effects of temperature on the output power and spectrum are discussed. The lifetime test of high power diode laser array packages is also performed. It shows that the conduction-cooled high power diode laser array packages have good optical performance.
9xx nm CW mini-bar diode lasers and stacks with high brightness and reliability are desired for pumping fiber lasers and direct fiber coupling applications. For the traditional cm-bar with 1mm-2mm cavity, it can provide CW output power up to 80W-100W and high reliability, whereas the brightness is relatively low. In comparison, mini-bar based diode lasers with 4mm cavity offer a superior performance balance between power, brightness, and reliability. However, the long cavity and large footprint of mini-bar diode laser renders its sensitivity towards thermal stress formed in packaging process, which directly affects the performances of high bright mini-bar diode lasers. In this work, the thermal stress correlating with package structure and packaging process are compared and analyzed. Based on the experiment and analysis results, an optimized package structure of CW 60W 976 nm mini-bar diode lasers is designed and developed which relieves thermal stress.
Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared “right shoulder” or “multi-peaks”, which were related to the voids in the solder interface layer. Finally, “void-free” techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.
With the improvement of output power, efficiency and reliability, high power semiconductor lasers have been applied in more and more fields. In this paper, a conduction-cooled, high peak output power semiconductor laser array was studied and developed. The structure and operation parameters of G-Stack semiconductor laser array were designed and optimized using finite element method (FEM). A Quasi-continuous-wave (QCW) conduction-cooled G-Stack semiconductor laser array with a narrow spectrum width was fabricated successfully.
A new beam-shaping technique is proposed to improve the beam quality of a high-power diode laser area light source. It consists of two staggered prism arrays and a reflector array, which can cut the slow axis beam twice and rearrange the divided beams in fast axis to make the beam quality of both axes approximately equal. Furthermore, the beam transformation and compression can be carried out simultaneously, and the assembly error of this technique induced by the machining accuracy of prism’s dimensions also can be greatly decreased. By this technique, a fiber-coupled system for one three-bar laser diode stack is designed and characterized. The experimental results demonstrate that the laser beams could be transformed into the required distribution with ∼93.4% reshaped efficiency and coupled into a 400 μm/0.22 NA fiber, which are consistent with the theory.
High power semiconductor laser arrays have found increased applications in many fields. In this work, a hard soldering
microchannel cooler (HSMCC) technology was developed for packaging high power diode laser array. Numerical
simulations of the thermal behavior characteristics of hard solder and indium solder MCC-packaged diode lasers were
conducted and analyzed. Based on the simulated results, a series of high power HSMCC packaged diode laser arrays
were fabricated and characterized. The test and statistical results indicated that under the same output power the HSMCC
packaged laser bar has lower smile and high reliability in comparison with the conventional copper MCC packaged laser
bar using indium soldering technology.
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