Dr. Yoann Blancquaert Profile

Dr. Yoann Blancquaert

at CEA-LETI

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 10 April 2024 Poster + Paper

Small angle x-ray scattering overlay metrology for advanced nodes

Timothée Choisnet, Guillaume Freychet, Yoann Blancquaert, Patrice Gergaud

Proceedings Volume 12955, 1295535 (2024) https://doi.org/10.1117/12.3010744

KEYWORDS: Overlay metrology, Scanning electron microscopy, Contour extraction, Scanning transmission electron microscopy, Semiconducting wafers, Scattering, X-rays, Silicon, Image restoration, Critical dimension metrology

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SPIE Journal Paper | 24 June 2023

Reconstruction of the in-depth profile of line gratings with critical dimension grazing incidence small angle x-ray scattering on laboratory equipment

Guillaume Freychet, Guido Rademaker, Yoann Blancquaert, Patrice Gergaud

JM3, Vol. 22, Issue 03, 031210, (June 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.3.031210

KEYWORDS: X-rays, X-ray sources, Scattering, Grazing incidence, Silicon, Reflection, Laser scattering, Atomic force microscopy, X-ray microscopy, X-ray technology

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Proceedings Article | 27 April 2023 Presentation + Paper

Reconstruction of the in-depth profile of line gratings with critical dimension grazing incidence small angle x-ray scattering on a laboratory equipment

Guillaume Freychet, Guido Rademaker, Yoann Blancquaert, Patrice Gergaud

Proceedings Volume 12496, 124961L (2023) https://doi.org/10.1117/12.2657500

KEYWORDS: X-rays, Scattering, X-ray sources, Grazing incidence, Silicon, Reflection, Metrology, Atomic force microscopy, Genetic algorithms, Signal intensity

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Proceedings Article | 20 March 2020 Paper

Stitched overlay evaluation and improvement for large field applications

Michael May, Blandine Minghetti, Jérome Dépré, Yoann Blancquaert, Pui Lam, Céline Lapeyre, Joungchel Lee

Proceedings Volume 11325, 113251L (2020) https://doi.org/10.1117/12.2552012

KEYWORDS: Overlay metrology, Metrology, Scanners, Critical dimension metrology

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Reducing the overlay error between stacked layers is key to enabling higher pattern density and thus moving towards high performance and more cost effective devices. However, as for specific applications like macrochips with photonic interconnects and high-resolution image sensor flat panels with advance polarizers, customers require product field sizes that are larger than the maximum field size available on scanners. Those large fields are obtained by stitching together multiple standard fields. The overlay performances between two adjacent dies are as aggressive as what is usually required between two stacked layers. For this application, the well-established polynomial overlay model is not suitable as the displacement is measured relatively and the metrology sampling in the field is such that some high order nonlinear (K) terms cannot be modeled independently. Furthermore, a perfect grid is needed in mix and match production. The intrafield correction capability of the exposure tool is not the same for each process steps. For example, no intrinsic K13 can be printed for a mix and match process flow that includes an Extreme Ultra-Violet (EUV) litho step. In addition, some KrF scanners with fewer lens manipulators cannot correct for K9. Measuring the stitching and correcting it at the first layer will prevent printing K terms that are not correctable later in the process. In this paper, the need to characterize and control single-layer overlay among different pattern placement mechanisms intrinsic to the scanner was studied: optical aberrations, field-to-field position, mask placement and registration. An ASML set-up BP-XY-V3 reticle was used to generate a large experimental dataset to validate stitching models supported by Overlay Optimizer (OVO). Overlay measurements were done Resist-in-Resist using new YieldStar (YS) interlaced stitching Diffraction Based Overlay (μDBO) targets that were designed and validated. This paper will present on product metrology results of a scatterometry-based platform showing production results with focus not only on precision and on accuracy, but also assessing target performance and target-to-target delta without process influence. A high order stitching model was developed and verified on a Multi-Product Reticle for a large device application. Trench width control at the field intersection was studied then optimized with proximity correction to ensure a perfect field-to-field junction.

Proceedings Article | 26 March 2019 Presentation + Paper

Application of PSD for the extraction of programmed line roughness from SAXS

Jérôme Reche, Maxime Besacier, Patrice Gergaud, Yoann Blancquaert

Proceedings Volume 10959, 109590U (2019) https://doi.org/10.1117/12.2514919

KEYWORDS: Line width roughness, Scanning electron microscopy, Diffraction, Line edge roughness, Metrology, Fourier transforms, Critical dimension metrology

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Proceedings Article | 19 September 2018 Paper

Performance validation of Mapper FLX-1200

Jonathan Pradelles, Yoann Blancquaert, Stefan Landis, Laurent Pain, Guido Rademaker, Isabelle Servin, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Marco Wieland

Proceedings Volume 10775, 1077507 (2018) https://doi.org/10.1117/12.2324054

KEYWORDS: Semiconducting wafers, Overlay metrology, Prototyping, Optical scanning, Scanning electron microscopy, Lithography, Line width roughness, Optical alignment, Electron beams, Silicon

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Proceedings Article | 19 September 2018 Paper

Feasibility of monitoring a multiple e-beam tool using scatterometry and machine learning: stitching error detection

Guido Rademaker, Yoann Blancquaert, Thibault Labbaye, Lucie Mourier, Nivea Figueiro, Francisco Sanchez, Roy Koret, Jonathan Pradelles, Stéfan Landis, Stéphane Rey, Ronny Haupt, Barak Bringoltz, Michael Shifrin, Daniel Kandel, Avron Ger, Matthew Sendelbach, Shay Wolfling, Laurent Pain

Proceedings Volume 10775, 1077508 (2018) https://doi.org/10.1117/12.2326595

KEYWORDS: Machine learning, Scatterometry, Semiconducting wafers, Lithography, Metrology, Channel projecting optics, Wafer-level optics, Reflectance spectroscopy, Inverse optics, Electron beam direct write lithography, Maskless lithography

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Multiple electron beam direct write lithography is an emerging technology promising to address new markets, such as truly unique chips for security applications. The tool under consideration, the Mapper FLX-1200, exposes long 2.2 μm-wide zones called stripes by groups of 49 beams. The critical dimensions inside and the registration errors between the stripes, called stitching, are controlled by internal tool metrology. Additionally, there is great need for on-wafer metrology of critical dimension and stitching to monitor Mapper tool performance and validate the internal metrology. Optical Critical Dimension (OCD) metrology is a workhorse technique for various semiconductor manufacturing tools, such as deposition, etching, chemical-mechanical polishing and lithography machines. Previous works have shown the feasibility to measure the critical dimension of non-uniform targets by introducing an effective CD and shown that the non-uniformity can be quantified by a machine learning approach. This paper seeks to extend the previous work and presents a preliminary feasibility study to monitor stitching errors by measuring on a scatterometry tool with multiple optical channels. A wafer with OCD targets that mimic the various lithographic errors typical to the Mapper technology was created by variable shaped beam (VSB) e-beam lithography. The lithography process has been carefully tuned to minimize optically active systematic errors such as critical dimension gradients. The OCD targets contain horizontal and vertical gratings with a pitch of 100 nm and a nominal CD of 50 nm, and contain various stitching error types such as displacement in X, Y and diagonal gratings. Sensitivity to all stitching types has been shown. The DX targets showed non-linearity with respect to error size and typically were a factor of 3 less sensitive than the promising performance of DY targets. A similar performance difference has seen in nominally identical diagonal gratings exposed with vertical and horizontal lines, suggesting that OCD metrology for DX cannot be fully characterized due to lithography errors in gratings with vertical lines.

Proceedings Article | 19 September 2018 Paper

Manufacturing of roughness standard samples based on ACF/PSD model programming

Jérôme Reche, Maxime Besacier, Patrice Gergaud, Yoann Blancquaert

Proceedings Volume 10775, 1077519 (2018) https://doi.org/10.1117/12.2327095

KEYWORDS: Scanning electron microscopy, Computer programming, Manufacturing, Line width roughness, Lithography, Statistical modeling, Line edge roughness, Critical dimension metrology, Metrology, Edge roughness

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SPIE Journal Paper | 31 July 2018

Programmed line width roughness metrology by multitechniques approach

Jérôme Reche, Maxime Besacier, Patrice Gergaud, Yoann Blancquaert, Guillaume Freychet, Thibault Labbaye

JM3, Vol. 17, Issue 04, 041005, (July 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.041005

KEYWORDS: Metrology, Line width roughness, Critical dimension metrology, Sensors, X-rays, Scanning electron microscopy, Reflectivity, Scattering, Reliability, Manufacturing

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Proceedings Article | 19 March 2018 Presentation + Paper

Process development of a maskless N40 via level for security application with multi-beam lithography

Isabelle Servin, Patricia Pimenta-Barros, Arthur Bernadac, Jonathan Pradelles, Allan Germain, Yoann Blancquaert, Philippe Essomba, Stefan Landis, Gerard ten Berge, Marco Wieland, Philippe Brun

Proceedings Volume 10584, 1058411 (2018) https://doi.org/10.1117/12.2297162

KEYWORDS: Etching, Semiconducting wafers, Lithography, Scanning electron microscopy, System on a chip, Optical alignment, Electron beam lithography, Metals, Back end of line, Copper

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Proceedings Article | 19 March 2018 Presentation + Paper

Performance validation of Mapper's FLX-1200

Marco Wieland, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Yoann Blancquaert, Stefan Landis, Laurent Pain, Jonathan Pradelles, Guido Rademaker, Isabelle Servin

Proceedings Volume 10584, 105840G (2018) https://doi.org/10.1117/12.2300816

KEYWORDS: Semiconducting wafers, Line width roughness, Optical alignment, Overlay metrology, Electron beams, Electron beam lithography

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Proceedings Article | 13 March 2018 Presentation + Paper

Programmed LWR metrology by multi-techniques approach

Jérôme Reche, Maxime Besacier, Patrice Gergaud, Yoann Blancquaert, Guillaume Freychet, Thibault Labbaye

Proceedings Volume 10585, 105850F (2018) https://doi.org/10.1117/12.2292169

KEYWORDS: Line width roughness, Metrology, Critical dimension metrology, Reflectivity, Reliability, Scanning electron microscopy, Manufacturing, X-rays, Microelectronics

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Proceedings Article | 27 April 2017 Presentation

Overlay performance assessment of MAPPER's FLX-1200 (Conference Presentation)

Ludovic Lattard, Isabelle Servin, Jonathan Pradelles, Yoann Blancquaert, Guido Rademaker, Laurent Pain, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco J. Jager, Jerry J. Peijster, Erwin Slot, Stijn W. H. Steenbrink, Niels Vergeer, Marco Wieland

Proceedings Volume 10144, 101440N (2017) https://doi.org/10.1117/12.2260878

KEYWORDS: Semiconducting wafers, Lithography, Electron beam lithography, Photomasks, Switching, Electron beams, Lithographic illumination, Integrated optics, Optical alignment, Wafer-level optics

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Mapper Lithography has introduced its first product, the FLX–1200, which is installed at CEA-Leti in Grenoble (France). This is a mask less lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. This FLX platform is initially targeted for 1 wph performance for 28 nm technology nodes, but can also be used for less demanding imaging. The electron source currently integrated is capable of scaling to 10 wph at the same resolution performance, which will be implemented by gradually upgrading the illumination optics. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion systems using standard NVSM marks. The tool at CEA-Leti is in-line with a Sokudo Duo clean track. Mapper Lithography and CEA-Leti are working in collaboration to develop turnkey solution for specific applications. At previous conferences we have presented imaging results including 28nm node resolution, cross wafer CDu of 2.5nm 3 and a throughput of half a wafer per hour, overhead times included. At this conference we will present results regarding the overlay performance of the FLX-1200. In figure 2 an initial result towards measuring the overlay performance of the FLX-1200 is shown. We have exposed a wafer twice without unloading the wafer in between exposures. In the first exposure half of a dense dot array is exposed. In the second exposure the remainder of the dense dot array is exposed. After development the wafer has been inspected using a CD-SEM at 480 locations distributed over an area of 100mm x 100mm. For each SEM image the shift of the pattern written in the first exposure relative to the pattern written in the second exposure is measured. Cross wafer this shift is 7 nm u+3s in X and 5 nm u+3s in Y. The next step is to evaluate the impact of unloading and loading of the wafer in between exposures. At the conference the latest results will be presented.

Proceedings Article | 10 April 2017 Presentation + Paper

Nanoimprint, DSA, and multi-beam lithography: patterning technologies with new integration challenges

S. Landis, H. Teyssedre, G. Claveau, I. Servin, F. Delachat, M. L. Pourteau, A. Gharbi, P. Pimenta Barros, R. Tiron, L. Nouri, N. Possemé, M. May, P. Brianceau, S. Barnola, Y. Blancquaert, J. Pradelles, P. Essomba, A. Bernadac, B. Dal'zotto, S. Bos, M. Argoud, G. Chamiot-Maitral, A. Sarrazin, C. Tallaron, C. Lapeyre, L. Pain

Proceedings Volume 10149, 101490K (2017) https://doi.org/10.1117/12.2259966

KEYWORDS: Directed self assembly, Lithography, Line width roughness, Nanoimprint lithography, Semiconducting wafers, Etching, Electron beam lithography, System on a chip, Critical dimension metrology, Photoresist processing

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Proceedings Article | 28 March 2017 Paper

Scatterometry control for multiple electron beam lithography

Yoann Blancquaert, Nivea Figueiro, Thibault Labbaye, Francisco Sanchez, Stephane Heraud, Roy Koret, Matthew Sendelbach, Ralf Michel, Shay Wolfling, Stephane Rey, Laurent Pain

Proceedings Volume 10145, 101451F (2017) https://doi.org/10.1117/12.2261389

KEYWORDS: Optical metrology, Electron beam lithography, Scatterometry, Process control, Nanoimprint lithography, Critical dimension metrology, Extreme ultraviolet lithography, Optical lithography, Metrology, Inspection, Scatter measurement, Semiconducting wafers, Error analysis, Maskless lithography, Cadmium sulfide, Nano opto mechanical systems, Lithography

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Proceedings Article | 8 March 2016 Paper

A study of lateral roughness evaluation through critical-dimension small angle x-ray scattering (CD-SAXS)

G. Freychet, C. Cadoux, Y. Blancquaert, S. Rey, M. Maret, P. Gergaud

Proceedings Volume 9778, 97783V (2016) https://doi.org/10.1117/12.2235102

KEYWORDS: Line edge roughness, Line width roughness, Scattering, X-rays, Scanning electron microscopy, Satellites, Optical lithography, Metrology, Lithography, Silicon

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Proceedings Article | 19 March 2015 Paper

Target design optimization for overlay scatterometry to improve on-product overlay

Henk-Jan Smilde, Richard J. van Haren, Willy van Buël, Lars H. Driessen, Jérôme Dépré, Jan Beltman, Florent Dettoni, Julien Ducoté, Christophe Dezauzier, Yoann Blancquaert

Proceedings Volume 9424, 942412 (2015) https://doi.org/10.1117/12.2085642

KEYWORDS: Metrology, Semiconducting wafers, Overlay metrology, Optical design, Scatterometry, Cameras, Wafer-level optics, Diffraction gratings, Sensors, Diffraction

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Proceedings Article | 18 April 2013 Paper

Performance of ASML YieldStar µDBO overlay targets for advanced lithography nodes C028 and C014 overlay process control

Yoann Blancquaert, Christophe Dezauzier, Jerome Depre, Mohamed Miqyass, Jan Beltman

Proceedings Volume 8681, 86811F (2013) https://doi.org/10.1117/12.2011406

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Metals, Process modeling, Lithography, Process control, Target recognition, Scatterometry, Reticles

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Proceedings Article | 18 April 2013 Paper

Diffraction based overlay and image based overlay on production flow for advanced technology node

Yoann Blancquaert, Christophe Dezauzier

Proceedings Volume 8681, 86812O (2013) https://doi.org/10.1117/12.2011498

KEYWORDS: Overlay metrology, Image processing, Diffraction, Semiconducting wafers, Metals, Metrology, Data modeling, Signal processing, Lithography, Etching

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Proceedings Article | 5 April 2012 Paper

Integration and automation of DoseMapper in a logic fab APC system: application for 45/40/28nm node

Bertrand Le Gratiet, Christophe Salagnon, Jean de Caunes, Marc Mikolajczak, Vincent Morin, Nicolas Chojnowski, Frank Sundermann, Jean Massin, Alice Pelletier, Joel Metz, Yoann Blancquaert, Regis Bouyssou, Arthur Pelissier, Olivier Belmont, Anne Strapazzon, Anna Phillips, Thierry Devoivre, Emilie Bernard, Estelle Batail, Lionel Thevenon, Benedicte Bry, Fabrice Bernard-Granger, Ahmed Oumina, Marie-Pierre Baron, Didier Gueze

Proceedings Volume 8324, 83241Y (2012) https://doi.org/10.1117/12.911882

KEYWORDS: Etching, Photomasks, Logic, Databases, Control systems, Scanners, Metrology, Semiconducting wafers, Lithography, Process control

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Proceedings Article | 2 April 2010 Paper

Improved CD control for 45-40 nm CMOS logic patterning: anticipation for 32-28 nm

Bertrand Le Gratiet, Frank Sundermann, Jean Massin, Marianne Decaux, Nicolas Thivolle, Fabrice Baron, Alain Ostrovsky, Cedric Monget, Jean Damien Chapon, Yoann Blancquaert, Karen Dabertrand, Lionel Thevenon, Benedicte Bry, Nicolas Cluet, Bertrand Borot, Raphael Bingert, Thierry Devoivre, Pascal Gourard, Laurène Babaud, Ute Buttgereit, Robert Birkner, Mark Joyner, Erez Graitzer, Avi Cohen

Proceedings Volume 7638, 76380A (2010) https://doi.org/10.1117/12.845987

KEYWORDS: Photomasks, Critical dimension metrology, Metrology, Etching, Scanners, Semiconducting wafers, Airborne remote sensing, Logic, Optical lithography, Process control

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Proceedings Article | 14 April 2006 Paper

Spatial fluorescence cross-correlation spectroscopy between core and ring pinholes

Yoann Blancquaert, Antoine Delon, Jacques Derouard, Rodolphe Jaffiol

Proceedings Volume 6191, 61910B (2006) https://doi.org/10.1117/12.662244

KEYWORDS: Diffusion, Luminescence, Fluorescence correlation spectroscopy, Bioalcohols, Fluorescence spectroscopy, Spectroscopy, Molecules, Confocal microscopy, Optical fibers, Water

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Showing 5 of 22 publications

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