FUTURE LITHOGRAPHY

Large-field particle beam optics for projection and proximity printing and for maskless lithography

[+] Author Affiliations
Hans Loeschner, Gerhard Stengl, Herbert Buschbeck, Alfred Chalupka, Gertraud Lammer, Elmar Platzgummer, Herbert Vonach

IMS Nanofabrication GmbH, A-1020?Vienna, AustriaE-mail: hans.loeschner@ims.co.at

Patrick W. H. de Jager

TNO/TPD, Delft, The Netherlands

Rainer Kaesmaier, Albrecht Ehrmann, Stefan Hirscher, Andreas Wolter

Infineon Technologies AG, Munich, Germany

Andreas Dietzel, Ru¨diger Berger, Hubert Grimm

IBM Storage Technology Division, Mainz, Germany

Bruce D. Terris

IBM Almaden Research Center, San Jose, California

Wilhelm H. Bruenger

Fraunhofer Institute for Silicon Technology (ISiT), Itzehoe, Germany

Gerhard Gross, Olaf Fortagne, Dieter Adam, Michael Bo¨hm, Hans Eichhorn

Leica Microsystems Lithography GmbH, Jena, Germany

Reinhard Springer, Joerg Butschke, Florian Letzkus

ims chips—Institute for Microelectronics Stuttgart, Stuttgart, Germany

Paul Ruchhoeft, John C. Wolfe

University of Houston, Department of Electrical and Computer Engineering, Houston, Texas

J. Micro/Nanolith. MEMS MOEMS. 2(1), 34-48 (Jan 01, 2003). doi:10.1117/1.1528946
History: Received Feb. 27, 2002; Revised Jun. 21, 2002; Accepted Aug. 13, 2002; Online January 09, 2003
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Recent studies have shown the utility of ion projection lithography (IPL) for the manufacturing of integrated circuits. In addition, ion projection direct structuring (IPDS) can be used for resistless, noncontact modification of materials. In cooperation with IBM Storage Technology Division, ion projection patterning of magnetic media layers has been demonstrated. With masked ion beam proximity techniques, unique capabilities for lithography on nonplanar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBL) and masked ion beam direct structuring (MIBS) tool with sub-20-nm resolution capability within 88-mm□ exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume projection maskless lithography (projection-ML2) is discussed. In the case of projection-ML2 there are advantages of using electrons instead of ions. Including gray scaling, an improved concept for a ⩽50-nm projection-ML2 system is presented with the potential to meet a throughput of 20 wafers per hour (300 mm). © 2003 Society of Photo-Optical Instrumentation Engineers.

© 2003 Society of Photo-Optical Instrumentation Engineers

Citation

Hans Loeschner ; Gerhard Stengl ; Herbert Buschbeck ; Alfred Chalupka ; Gertraud Lammer, et al.
"Large-field particle beam optics for projection and proximity printing and for maskless lithography", J. Micro/Nanolith. MEMS MOEMS. 2(1), 34-48 (Jan 01, 2003). ; http://dx.doi.org/10.1117/1.1528946


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