Articles

Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope

[+] Author Affiliations
Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling

GLOBALFOUNDRIES, 2070 Route 52, Hopewell Junction, New York 12533

Carsten Hartig, John Allgair, Peter Ebersbach

GLOBALFOUNDRIES, Wilschdorfer Landstraße 101, 01109 Dresden, Germany

Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin Mclellan, Charles Archie

IBM Corporation, 2070 Route 52, Hopewell Junction, New York 12533

Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng

Nova Measuring Instruments, Inc., 4701 Patrick Henry Drive, Suite 1701, Santa Clara, California 95054

Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

Nova Measuring Instruments, Ltd., P.O. Box 266, Weizmann Science Park, Rehovot 76100, Israel

J. Micro/Nanolith. MEMS MOEMS. 10(4), 043016 (December 15, 2011). doi:10.1117/1.3655726
History: Received April 19, 2011; Revised September 21, 2011; Accepted September 29, 2011; Published December 15, 2011; Online December 15, 2011
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Shrinking design rules and reduced process tolerances require tight control of critical dimension (CD) linewidth, feature shape, and profile of the printed geometry. The holistic metrology approach consists of utilizing all available information from different sources such as data from other toolsets, multiple optical channels, multiple targets, etc., to optimize metrology recipe and improve measurement performance. Various in-line CD metrology toolsets such as scatterometry optical CD, CD-SEM, and CD-AFM are typically utilized individually in fabs. Each of these toolsets has its own set of limitations that are intrinsic to specific measurement technique and algorithm. Here we define “hybrid metrology” to be the use of any two or more metrology toolsets in combination to measure the same dataset. We demonstrate the benefits of the hybrid metrology on two test structures: 22-nm-node gate develop inspect and 32-nm-node fin-shaped field effect transistor gate final inspect. We will cover measurement results obtained using typical BKM (nonhybrid, single toolset standard results) as well as those obtained by utilizing the hybrid metrology approach. Measurement performance will be compared using standard metrology metrics; for example, accuracy and precision.

© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Alok Vaid ; Bin Bin Yan ; Yun Tao Jiang ; Mark Kelling ; Carsten Hartig, et al.
"Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope", J. Micro/Nanolith. MEMS MOEMS. 10(4), 043016 (December 15, 2011). ; http://dx.doi.org/10.1117/1.3655726


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