Determination of resist parameters using the extended Nijboer-Zernike theory

Peter Dirksen; Joseph Braat; Augustus J. E. M. Janssen; Ad Leeuwestein; Hans Kwinten; David Van Steenwinckel

doi:10.1117/12.531840

28 May 2004 Determination of resist parameters using the extended Nijboer-Zernike theory

Peter Dirksen, Joseph Braat, Augustus J. E. M. Janssen, Ad Leeuwestein, Hans Kwinten, David Van Steenwinckel

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.531840
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

This study presents an experimental method to determine the resist parameters that are at the origin of a general blurring of the projected aerial image. The resist model includes the effects of diffusion in the horizontal plane and a second cause for image blur that originates from a stochastic variation of the focus parameter. The used mathematical framework is the so-called Extended Nijboer-Zernike (ENZ) theory. The experimental procedure to extract the model parameters is demonstrated for several 193 nm resists under various conditions of post exposure baking temperature and baking time. The advantage of our approach is a clear separation between the optical parameters, such as feature size, projection lens aberrations and the illuminator setting on the one hand and process parameters introducing blur on the other.

Citation Download Citation

Peter Dirksen, Joseph Braat, Augustus J. E. M. Janssen, Ad Leeuwestein, Hans Kwinten, and David Van Steenwinckel "Determination of resist parameters using the extended Nijboer-Zernike theory", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.531840

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