Mirror-based and zone plate-based imaging systems are being used in actinic extreme ultraviolet (EUV) reticle review tools. With regard to zone plates, a short working distance is advantageous in terms of the required spectral bandwidth, manufacturability, and potential throughput and imaging performance. Zone plates therefore typically have a short working distance. The industry has adopted the use of an EUV pellicle to protect the photomask. Imaging photomask through-pellicle requires a working distance larger than 2.5 mm. A zone-plate-based EUV mask microscope with a 3-mm working distance has been commissioned at beamline 11.3.2 of the Advanced Light Source. Through-pellicle imaging at an exposure time of 2 s is demonstrated. The instrument achieves an image contrast of 95% on large features on a photomask with a tantalum-based absorber. Imaging down to 45-nm half pitch (mask scale) is demonstrated. A NILS of 2.55 is achieved on 60-nm half-pitch (mask scale) lines and spaces. These results demonstrate that zone-plate-based imaging systems can meet the requirements of an actinic EUV mask review tool in terms of imaging performance and throughput in an instrument compatible with EUV pellicles.
Vibration levels in MET5 exposures were reduced from 1.5 nm RMS to 0.8 nm RMS by tuning the vibration isolation system and removing non-compliant hardware. Frequency doubling exposures were improved by replacing the Fourier synthesis pupil scanner mirror. Focus-exposure-matrix outliers have been solved by patching a bug in the control software. 9 nm half-pitch lines and 8 nm half-pitch lines were printed in 11 nm thick MOx resist.
A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamline 12.0.1.4 of the Advanced Light Source synchrotron facility at Lawrence Berkeley National Laboratory. Commissioning has demonstrated a patterning resolution of 13 nm half-pitch with annular 0.35 – 0.55 illumination; a patterning resolution of 8 nm half-pitch with annular 0.1 – 0.2 illumination; critical dimension (CD) uniformity of 0.7 nm 1σ on 16 nm nominal CD across 80% of the 200 um x 30 um aberration corrected field of view; aerial image vibration relative to the wafer of 0.75 nn RMS and focus control and focus stepping better than 15 nm.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.