Prof. Hongping Zhao Profile

Prof. Hongping Zhao

at Ohio State Univ

SPIE Involvement:

Author | Science Fair Judge

Area of Expertise:

III-Nitride Semiconductor LEDs , InGaN QW based LEDs and LDs , MOCVD Exitaxy , Device Fabrication and Characterizations , Band Structure Simulations

Websites:

Company Website

Publications (27)

Proceedings Article | 16 March 2023 Presentation

Materials and device engineering for high-performance gallium oxide electronics (Conference Presentation)

Sushovan Dhara, Ashok Dheenan, Joishi Chandan, Joe McGlone, Hongping Zhao, Siddharth Rajan

Proceedings Volume PC12422, PC124220I (2023) https://doi.org/10.1117/12.2662317

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Proceedings Article | 5 March 2021 Presentation + Paper

Detailed investigation of MOCVD-grown [beta]-Ga2O3 through quantitative defect spectroscopies

Hemant Ghadi, Joe McGlone, Zixuan Feng, A.F.M. Anhar Uddin Bhuiyan, Yuxuan Zhang, Hongping Zhao, Andrew Armstrong, George Burns, Gyorgy Vizkelethy, Ed Bielejec, Aaron Arehart, Steven Ringel

Proceedings Volume 11687, 116870T (2021) https://doi.org/10.1117/12.2589947

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Proceedings Article | 10 March 2020 Presentation

MOCVD epitaxy and doping for beta-Ga2O3 and (AlxGa1-x)2O3 (Conference Presentation)

Hongping Zhao

Proceedings Volume 11281, 112810C (2020) https://doi.org/10.1117/12.2552502

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Proceedings Article | 8 March 2019 Presentation

Beta-Ga2O3: materials synthesis and device demonstration (Conference Presentation)

Hongping Zhao

Proceedings Volume 10919, 109190H (2019) https://doi.org/10.1117/12.2515472

KEYWORDS: Low pressure chemical vapor deposition, Thin films, Gallium, Gallium nitride, Silicon carbide, Crystals, Metalorganic chemical vapor deposition, Thin film growth, Argon, Oxides

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Proceedings Article | 17 September 2018 Presentation

LPCVD Grown β-Ga2O3: Materials and devices (Conference Presentation)

Hongping Zhao

Proceedings Volume 10754, 1075405 (2018) https://doi.org/10.1117/12.2322940

KEYWORDS: Low pressure chemical vapor deposition, Thin films, Gallium, Gallium nitride, Silicon carbide, Crystals, Metalorganic chemical vapor deposition, Thin film growth, Argon, Oxides

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Proceedings Article | 19 April 2017 Presentation

Ultra-wide bandgap beta-Ga2O3 for deep-UV solar blind photodetectors (Conference Presentation)

Subrina Rafique, Lu Han, Hongping Zhao

Proceedings Volume 10105, 101051O (2017) https://doi.org/10.1117/12.2252373

KEYWORDS: Palladium, Semiconductor materials, Thin films, Photodetectors, Deep ultraviolet, Low pressure chemical vapor deposition, Thin film growth, Ultraviolet radiation, Metalorganic chemical vapor deposition, Thermal effects

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Proceedings Article | 19 April 2017 Presentation

Novel device designs enabled by lattice-matched GaN-ZnGeN2 heterostructures (Conference Presentation)

Hongping Zhao, Lu Han

Proceedings Volume 10104, 101041W (2017) https://doi.org/10.1117/12.2252185

KEYWORDS: Lutetium, Quantum wells, Light emitting diodes, Gallium nitride, Heterojunctions, Optoelectronics, Solid state lighting, Quantum efficiency, Green light emitting diodes, Scattering

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Proceedings Article | 27 February 2014 Paper

High efficiency green light-emitting diodes based on InGaN-ZnGeN2 type-II quantum wells

Lu Han, Kathleen Kash, Hongping Zhao

Proceedings Volume 9003, 90030W (2014) https://doi.org/10.1117/12.2038756

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Light emitting diodes, Quantum efficiency, Green light emitting diodes, Heterojunctions, Chemical species, Solid state lighting, Polarization

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Proceedings Article | 25 March 2013 Paper

GaN microdomes for broadband omnidirectional antireflection for concentrator photovoltaics

Lu Han, Matthew McGoogan, Tyler Piedimonte, Ian Kidd, Roger French, Hongping Zhao

Proceedings Volume 8620, 862016 (2013) https://doi.org/10.1117/12.2002864

KEYWORDS: Gallium nitride, Reflectivity, Silica, Reflection, Antireflective coatings, Polarization, Photovoltaics, Etching, Finite-difference time-domain method, Reactive ion etching

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Proceedings Article | 4 March 2013 Paper

Light extraction efficiency enhancement for InGaN quantum wells light-emitting diodes with GaN micro-domes

Peng Zhao, Lu Han, Hongping Zhao

Proceedings Volume 8641, 864117 (2013) https://doi.org/10.1117/12.2002857

KEYWORDS: Light emitting diodes, Quantum wells, Indium gallium nitride, Gallium nitride, Finite-difference time-domain method, Quantum efficiency, Semiconductors, External quantum efficiency, Reactive ion etching, Mirrors

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Proceedings Article | 28 February 2012 Paper

Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

Guangyu Liu, Jing Zhang, Hongping Zhao, Nelson Tansu

Proceedings Volume 8262, 82621F (2012) https://doi.org/10.1117/12.909633

KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Gallium nitride, Quantum efficiency, Internal quantum efficiency, Metalorganic chemical vapor deposition, Electroluminescence, Semiconductors, Solid state lighting

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Proceedings Article | 14 February 2012 Paper

Engineering of AlGaN-Delta-GaN quantum wells gain media for mid- and deep-ultraviolet lasers

Jing Zhang, Hongping Zhao, Nelson Tansu

Proceedings Volume 8277, 82770J (2012) https://doi.org/10.1117/12.909165

KEYWORDS: Quantum wells, Deep ultraviolet, Gallium nitride, UV optics, Ultraviolet radiation, Semiconductor lasers, Laser optics, Light emitting diodes, Active optics, Structural design

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Proceedings Article | 3 March 2011 Paper

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

Hongping Zhao, Jing Zhang, Guangyu Liu, Takahiro Toma, Jonathan Poplawsky, Volkmar Dierolf, Nelson Tansu

Proceedings Volume 7939, 793905 (2011) https://doi.org/10.1117/12.875002

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Metalorganic chemical vapor deposition, Gallium nitride, Chemical elements, Polarization, Electron beams, Diodes, Optical matrix switches

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Proceedings Article | 17 February 2011 Paper

Gain characteristics of deep UV AlGaN quantum wells lasers

Jing Zhang, Hongping Zhao, Nelson Tansu

Proceedings Volume 7953, 79530H (2011) https://doi.org/10.1117/12.875079

KEYWORDS: Quantum wells, Aluminum nitride, Deep ultraviolet, UV optics, Laser optics, Light emitting diodes, Polarization, Semiconductor lasers, Crystals, Laser damage threshold

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Proceedings Article | 10 February 2011 Paper

Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering

Nelson Tansu, Hongping Zhao, Jing Zhang, Guangyu Liu, Xiao-Hang Li, Yik-Khoon Ee, Renbo Song, Takahiro Toma, Le Zhao, G. S. Huang

Proceedings Volume 7954, 795418 (2011) https://doi.org/10.1117/12.875901

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Gallium nitride, Surface plasmons, Gold, Silver, Microlens array, Epitaxy, Internal quantum efficiency

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Proceedings Article | 12 March 2010 Paper

Novel device concepts for high-efficiency InGaN-based light-emitting diodes

Hongping Zhao, Guangyu Liu, Yik-Khoon Ee, Xiao-Hang Li, Hua Tong, Jing Zhang, G. S. Huang, Nelson Tansu

Proceedings Volume 7602, 76021G (2010) https://doi.org/10.1117/12.842869

KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Gallium nitride, Sapphire, Microlens array, Internal quantum efficiency, Quantum efficiency, Microlens, Active optics

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Proceedings Article | 12 March 2010 Paper

Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/Sapphire by 3ω method

Hua Tong, Jing Zhang, Hongping Zhao, Guangyu Liu, Vincent Handara, Juan Herbsommer, Nelson Tansu

Proceedings Volume 7602, 76020U (2010) https://doi.org/10.1117/12.842509

KEYWORDS: Indium nitride, Gallium nitride, Sapphire, Thin films, Diffusion, Thermal modeling, Metals, Ceramics, Amplifiers, Multilayers

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Proceedings Article | 26 February 2010 Paper

Band structure calculation of dilute-As GaNAs by first principle

Xiao-Hang Li, Hua Tong, Hongping Zhao, Nelson Tansu

Proceedings Volume 7597, 75970H (2010) https://doi.org/10.1117/12.842931

KEYWORDS: Gallium nitride, Chemical species, Electrons, Visible radiation, Semiconductors, Light emitting diodes, Physics, Optoelectronics, Semiconductor lasers, Crystals

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Proceedings Article | 26 February 2010 Paper

Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

Guangyu Liu, Hongping Zhao, Nelson Tansu

Proceedings Volume 7597, 75971K (2010) https://doi.org/10.1117/12.843054

KEYWORDS: Quantum wells, Gallium nitride, Aluminum nitride, Scattering, Phonons, Laser scattering, Quantum cascade lasers, Polarization, Electrons, Photons

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Proceedings Article | 12 February 2010 Paper

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes

Hongping Zhao, Guangyu Liu, Nelson Tansu

Proceedings Volume 7617, 76170W (2010) https://doi.org/10.1117/12.842742

KEYWORDS: Surface plasmons, Quantum wells, Silver, Gallium nitride, Indium gallium nitride, Gold, Metals, Light emitting diodes, Semiconductors, Thin films

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Proceedings Article | 24 February 2009 Paper

Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors

Hua Tong, Hongping Zhao, Vincent Handara, Juan Herbsommer, Nelson Tansu

Proceedings Volume 7211, 721103 (2009) https://doi.org/10.1117/12.809079

KEYWORDS: Scattering, Indium gallium nitride, Thermoelectric materials, Phonons, Gallium nitride, Semiconductors, Aluminum nitride, Crystals, Indium nitride, Temperature metrology

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Proceedings Article | 19 February 2009 Paper

Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy

Hongping Zhao, Hua Tong, Alexandra Driscoll, Muhammad Jamil, G. S. Huang, Nelson Tansu

Proceedings Volume 7216, 72160L (2009) https://doi.org/10.1117/12.808695

KEYWORDS: Indium nitride, Gallium nitride, Luminescence, Semiconductors, Vapor phase epitaxy, Temperature metrology, Doping, Sapphire, Crystals, Etching

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Proceedings Article | 3 February 2009 Paper

Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao, Guangyu Liu, Xiaohang Li, Ronald Arif, G. Huang, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 7231, 72310E (2009) https://doi.org/10.1117/12.808542

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Gallium nitride, Electroluminescence, Calibration, Metalorganic chemical vapor deposition, Structural design, Polarization, Sapphire

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Proceedings Article | 3 February 2009 Paper

Staggered InGaN quantum well diode lasers emitting at 500 nm

Hongping Zhao, Ronald Arif, Nelson Tansu

Proceedings Volume 7230, 72300G (2009) https://doi.org/10.1117/12.808561

KEYWORDS: Quantum wells, Indium gallium nitride, Semiconductor lasers, Gallium nitride, Polarization, Light emitting diodes, Electrons, Transition metals, Laser optics, Structural design

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Proceedings Article | 2 September 2008 Paper

Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes

Nelson Tansu, Ronald Arif, Hongping Zhao, G. Huang, Yik-Khoon Ee

Proceedings Volume 7058, 705812 (2008) https://doi.org/10.1117/12.802482

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Polarization, Gallium nitride, Luminescence, Transition metals, Nanostructures, Metalorganic chemical vapor deposition, Temperature metrology

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Proceedings Article | 25 February 2008 Paper

Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm

Ronald Arif, Hongping Zhao, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 6910, 691014 (2008) https://doi.org/10.1117/12.763362

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Luminescence, Gallium nitride, Transition metals, Polarization, Temperature metrology, Metalorganic chemical vapor deposition, Quantum efficiency

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Proceedings Article | 22 February 2008 Paper

Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect

Hongping Zhao, Ronald Arif, Yik Khoon Ee, Nelson Tansu

Proceedings Volume 6889, 688903 (2008) https://doi.org/10.1117/12.763804

KEYWORDS: Quantum wells, Indium gallium nitride, Laser damage threshold, Semiconductor lasers, Gallium nitride, Polarization, Active optics, Laser optics, Semiconductors, Indium nitride

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Showing 5 of 27 publications

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