Dr. Jean-Yves Duboz Profile

Dr. Jean-Yves Duboz

Center Director at CRHEA

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 5 March 2021 Presentation + Paper

Presentation + Paper

DUV LEDs based on AlGaN quantum dots

Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil

Proceedings Volume 11686, 116860T (2021) https://doi.org/10.1117/12.2576135

KEYWORDS: Light emitting diodes, Quantum dots, Deep ultraviolet, Ultraviolet radiation, Ultraviolet light emitting diodes, Transmission electron microscopy, Structural design, Scanning electron microscopy, Ranging, Quantum optics

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Proceedings Article | 21 November 2017 Open Access

Open Access

Paper

Status of AlGaN based focal plane array for near UV imaging and strategy to extend this technology to far-UV by substrate removal

Jean-Luc Reverchon, Yves Gourdel, Jean-Alexandre Robo, Jean-Patrick Truffer, Eric Costard, Julien Brault, Jean-Yves Duboz

Proceedings Volume 10566, 105662P (2017) https://doi.org/10.1117/12.2308214

KEYWORDS: Ultraviolet radiation, Staring arrays, Etching, Silicon, Cameras, Sapphire, Readout integrated circuits, Deep ultraviolet, Gallium nitride, Near ultraviolet

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Proceedings Article | 20 November 2017 Open Access

Open Access

Paper

Status of backthinned AlGaN based focal plane arrays for deep-UV imaging

J.-L. Reverchon, G. Lehoucq, J.-P. Truffer, E. Costard, E. Frayssinet, F. Semond, J.-Y. Duboz, A. Giuliani, M. Réfrégiers, M. Idir

Proceedings Volume 10565, 1056509 (2017) https://doi.org/10.1117/12.2309156

KEYWORDS: Staring arrays, Quantum efficiency, Deep ultraviolet, Silicon, Etching, Gallium nitride, Aluminum, Astronomical imaging, Photodiodes, Wet etching

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The achievement of deep ultraviolet (UV) focal plane arrays (FPA) is required for both solar physics [1] and micro electronics industry. The success of solar mission (SOHO, STEREO [2], SDO [3]…), has shown the accuracy of imaging at wavelengths from 10 nm to 140 nm to reveal effects occurring in the sun corona. Deep UV steppers at 13 nm are another demanding imaging technology for the microelectronic industry in terms of uniformity and stability. A third application concerns beam shaping of Synchrotron lines [4]. Consequently, such wavelengths are of prime importance whereas the vacuum UV wavelengths are very difficult to detect due to the dramatic interaction of light with materials.

The fast development of nitrides has given the opportunity to investigate AlGaN as a material for UV detection. Camera based on AlGaN present an intrinsic spectral selectivity and an extremely low dark current at room temperature. We have previously presented several FPA dedicated to deep UV based on 320 x 256 pixels of Schottky photodiodes with a pitch of 30 μm [4, 5]. AlGaN is grown on a silicon substrate instead of sapphire substrate only transparent down to 200 nm.

After a flip-chip hybridization, silicon substrate and AlGaN basal layer was removed by dry etching. Then, the spectral responsivity of the FPA presented a quantum efficiency (QE) from 5% to 20% from 50 nm to 290 nm when removing the highly doped contact layer via a selective wet etching. This FPA suffered from a low uniformity incompatible with imaging, and a long time response due to variations of conductivity in the honeycomb. We also observed a low rejection of visible. It is probably due to the same honeycomb conductivity enhancement for wavelength shorter than 360 nm, i.e., the band gap of GaN.

We will show hereafter an improved uniformity due to the use of a precisely ICP (Inductively Coupled Plasma) controlled process. The final membrane thickness is limited to the desertion layer. Neither access resistance limitation nor long response time are observed. QE varies from 5% at 50 nm to 15% at 6 nm (85% more when taking into account the filling factor). Consequently, we can propose prototypes concerning not only “solar blind” camera optimized for narrow band in the near UV range (between 280 nm and 260 nm), but also devices with spectral range extended in the deep UV (290 nm to 10 nm). Both detectors are available for an optical budget evaluation.

Proceedings Article | 4 March 2013 Paper

Paper

X-ray detectors based on GaN

J. Duboz, E. Frayssinet, Sebastien Chenot, J. Reverchon, M. Idir

Proceedings Volume 8625, 86251W (2013) https://doi.org/10.1117/12.2007827

KEYWORDS: Gallium nitride, Absorption, Diodes, X-rays, Solar energy, Sensors, Doping, X-ray detectors, Photovoltaics, Silicon

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Proceedings Article | 3 October 2011 Paper

Paper

Performances and reliability tests of AlGaN based focal plane array for deep-UV imaging

J.-L. Reverchon, G. Lehoucq, C. Lyoret, J.-P. Truffer, E. Costard, E. Frayssinet, J. Brault, J.-Y. Duboz, A. Giuliani, M. Réfrégier, M. Idir

Proceedings Volume 8176, 817619 (2011) https://doi.org/10.1117/12.898341

KEYWORDS: Staring arrays, Quantum efficiency, Deep ultraviolet, Silicon, Etching, Photodiodes, Doping, Imaging systems, Absorption, Semiconducting wafers

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Proceedings Article | 5 May 2011 Paper

Paper

EUV detectors based on AlGaN-on-Si Schottky photodiodes

P. Malinowski, J.-Y. Duboz, P. De Moor, K. Minoglou, J. John, P. Srivastava, F. Semond, E. Frayssinet, A. BenMoussa, B. Giordanengo, C. Van Hoof, R. Mertens

Proceedings Volume 8073, 807302 (2011) https://doi.org/10.1117/12.886682

KEYWORDS: Silicon, Extreme ultraviolet, Sensors, Imaging systems, Photodiodes, Photodetectors, Semiconducting wafers, Ultraviolet radiation, Diodes, Aluminum

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Proceedings Article | 14 May 2010 Paper

Paper

AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range

P. Malinowski, J.-Y. Duboz, J. John, C. Sturdevant, J. Das, J. Derluyn, M. Germain, P. De Moor, K. Minoglou, F. Semond, E. Frayssinet, J.-F. Hochedez, B. Giordanengo, C. Van Hoof, R. Mertens

Proceedings Volume 7726, 772617 (2010) https://doi.org/10.1117/12.853782

KEYWORDS: Extreme ultraviolet, Photodetectors, Sensors, Silicon, Gallium nitride, Etching, Ultraviolet radiation, Imaging systems, Visible radiation, Reactive ion etching

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Proceedings Article | 8 May 2010 Paper

Paper

Performances of AlGaN-based focal plane arrays from 10nm to 200nm

J.-L. Reverchon, S. Bansropun, J.-P. Truffer, E. Costard, E. Frayssinet, J. Brault, J.-Y. Duboz, A. Giuliani, M. Idir

Proceedings Volume 7691, 769109 (2010) https://doi.org/10.1117/12.853947

KEYWORDS: Staring arrays, Sapphire, Silicon, Deep ultraviolet, Quantum efficiency, Cameras, Ultraviolet radiation, Aluminum nitride, Gallium nitride, Packaging

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Proceedings Article | 23 September 2009 Paper

Paper

First demonstration and performance of AlGaN based focal plane array for deep-UV imaging

J.-L. Reverchon, S. Bansropun, J. Robo, J. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J. Duboz, M. Idir

Proceedings Volume 7474, 74741G (2009) https://doi.org/10.1117/12.830287

KEYWORDS: Silicon, Quantum efficiency, Staring arrays, Deep ultraviolet, Etching, Sapphire, Absorption, Photodiodes, Sensors, Dry etching

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Proceedings Article | 18 May 2009 Paper

Paper

Radiation hardness of AlxGa1-xN photodetectors exposed to Extreme UltraViolet (EUV) light beam

Pawel Malinowski, Joachim John, Frank Barkusky, Jean Yves Duboz, Anne Lorenz, Kai Cheng, Joff Derluyn, Marianne Germain, Piet De Moor, Kyriaki Minoglou, Armin Bayer, Klaus Mann, Jean-Francois Hochedez, Boris Giordanengo, Gustaaf Borghs, Robert Mertens

Proceedings Volume 7361, 73610T (2009) https://doi.org/10.1117/12.820691

KEYWORDS: Photodetectors, Gallium nitride, Extreme ultraviolet, Silicon, Photodiodes, Extreme ultraviolet lithography, Sun, Imaging systems, Gold, Sensors

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Proceedings Article | 26 April 2008 Paper

Paper

AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range

Pawel Malinowski, Joachim John, Anne Lorenz, Patricia Aparicio Alonso, Marianne Germain, Joff Derluyn, Kai Cheng, Gustaaf Borghs, Robert Mertens, Jean Yves Duboz, Fabrice Semond, J.-F. Hochedez, A. BenMoussa

Proceedings Volume 7003, 70030N (2008) https://doi.org/10.1117/12.780948

KEYWORDS: Extreme ultraviolet, Gallium nitride, Photodetectors, Gold, Silicon, Diodes, Sensors, Photodiodes, Imaging systems, Metalorganic chemical vapor deposition

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Proceedings Article | 26 October 2007 Paper

Paper

AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging

Jean-Luc Reverchon, Jean-Alexandre Robo, Jean-Patrick Truffer, Jean-Pascal Caumes, Idir Mourad, Julien Brault, Jean-Yves Duboz

Proceedings Volume 6744, 674417 (2007) https://doi.org/10.1117/12.754794

KEYWORDS: Staring arrays, Ultraviolet radiation, Deep ultraviolet, Photodiodes, Quantum efficiency, Sensors, Aluminum, Gallium nitride, Multiplexers, Metals

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Proceedings Article | 16 May 2007 Paper

Paper

Al_xGa_1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range

J. John, P. Malinowski, P. Aparicio, G. Hellings, A. Lorenz, M. Germain, F. Semond, J.-Y. Duboz, A. BenMoussa, J.-F. Hochedez, U. Kroth, M. Richter

Proceedings Volume 6585, 658505 (2007) https://doi.org/10.1117/12.723023

KEYWORDS: Aluminum, Sensors, Gallium, Extreme ultraviolet, Diodes, Staring arrays, Quantum efficiency, Ultraviolet radiation, Calibration, Imaging arrays

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Proceedings Article | 22 April 2006 Paper

Paper

Dynamic response of AlGaN based sensors under excimer laser irradiation

G. Mazzeo, J-L. Reverchon, G. Conte, A. Dussaigne, J-Y. Duboz

Proceedings Volume 6189, 61890E (2006) https://doi.org/10.1117/12.664430

KEYWORDS: Sensors, Excimer lasers, Diodes, Pulsed laser operation, Capacitance, Silicon, Semiconductors, Aluminum, Resistance

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Proceedings Article | 14 October 2005 Paper

Paper

Status of AlGaN based focal plane arrays for UV solar blind detection

Jean-Luc Reverchon, Giovanni Mazzeo, Amélie Dussaigne, Jean-Yves Duboz

Proceedings Volume 5964, 596402 (2005) https://doi.org/10.1117/12.625223

KEYWORDS: Sensors, Ultraviolet radiation, Charge-coupled devices, Ultraviolet detectors, Optical filters, Visible radiation, Antireflective coatings, Resistance, CMOS sensors, Diodes

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Proceedings Article | 7 July 2005 Paper

Paper

Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes

J. M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sanchez, A. Guzman, B. Damilano, J. Barjon, M. Hugues, J.-Y. Duboz, J. Massies, A. Trampert

Proceedings Volume 5840, (2005) https://doi.org/10.1117/12.608369

KEYWORDS: Quantum wells, Light emitting diodes, Temperature metrology, Electroluminescence, Laser damage threshold, Semiconductor lasers, Indium gallium arsenide, Gallium arsenide, Interfaces, Optoelectronics

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Proceedings Article | 7 July 2005 Paper

Paper

(Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers

B. Damilano, J. Barjon, M. Hugues, J.-Y. Duboz, J. Massies, J.-M. Ulloa, M. Montes, A. Hierro

Proceedings Volume 5840, (2005) https://doi.org/10.1117/12.608752

KEYWORDS: Quantum wells, Annealing, Nitrogen, Laser damage threshold, Gallium arsenide, Gallium, Temperature metrology, Molecular beam epitaxy, Cladding, Semiconductor lasers

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Proceedings Article | 7 July 2005 Paper

Paper

Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE

A. Hierro, J. M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.-Y. Duboz, J. Massies

Proceedings Volume 5840, (2005) https://doi.org/10.1117/12.608368

KEYWORDS: Quantum wells, Gallium arsenide, Indium gallium arsenide, Cladding, Internal quantum efficiency, Aluminum, Annealing, Transparency, Semiconductor lasers, Heterojunctions

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Proceedings Article | 9 September 1999 Paper

Paper

Long-wavelength high-power quantum fountain unipolar lasers in GaAs/AlGaAs quantum wells

Olivier Gauthier-Lafaye, Bruno Seguin-Roa, Francois Julien, Gottfried Strasser, Philippe Collot, Carlo Sirtori, Jean-Yves Duboz

Proceedings Volume 3828, (1999) https://doi.org/10.1117/12.361027

KEYWORDS: Optical pumping, Quantum wells, Carbon dioxide lasers, Electrons, Laser damage threshold, Gallium arsenide, Sensors, Absorption, High power lasers, Scattering

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Proceedings Article | 13 August 1997 Paper

Paper

Technology of multiple quantum well infrared detectors

Philippe Bois, Eric Costard, Jean-Yves Duboz, Julien Nagle

Proceedings Volume 3061, (1997) https://doi.org/10.1117/12.280395

KEYWORDS: Quantum well infrared photodetectors, Sensors, Quantum wells, Infrared detectors, Staring arrays, Long wavelength infrared, Gallium arsenide, Electrons, Thermography, Optimization (mathematics)

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Proceedings Article | 8 September 1995 Paper

Paper

Optimized multiquantum well infrared detectors

Philippe Bois, Eric Costard, Jean-Yves Duboz, Julien Nagle, Emmanuel Rosencher, Borge Vinter

Proceedings Volume 2552, (1995) https://doi.org/10.1117/12.218275

KEYWORDS: Quantum well infrared photodetectors, Sensors, Quantum wells, Gallium arsenide, Absorption, Modulators, Infrared detectors, Thermography, Electrons, Doping

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Showing 5 of 21 publications

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