Lithography

Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction

[+] Author Affiliations
Sung-Gyu Lee, Guk-Jin Kim, In-Seon Kim, Hye-Keun Oh

Hanyang University, Department of Applied Physics, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 426-791, Republic of Korea

Jin-Ho Ahn

Hanyang University, Division of Materials Science and Engineering, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791, Republic of Korea

Jin-Goo Park

Hanyang University, Department of Materials Engineering, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 426-791, Republic of Korea

J. Micro/Nanolith. MEMS MOEMS. 14(4), 043501 (Oct 07, 2015). doi:10.1117/1.JMM.14.4.043501
History: Received May 13, 2015; Accepted September 9, 2015
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Abstract.  We report on out-of-band (OoB) radiation that can cause degradation to the image quality in extreme-ultraviolet (EUV) lithography systems. We investigated the effect of OoB radiation with an EUV pellicle and found the maximum allowable reflectivity of OoB radiation from the EUV pellicle that can satisfy certain criteria (i.e., the image critical dimension error, contrast, and normalized image log slope). We suggested a multistack EUV pellicle that can obtain a high EUV transmission, minimal reflectivity of OoB radiation, and sufficient deep ultraviolet transmission for defect inspection and alignment without removing the EUV pellicle in an EUV lithography system.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Sung-Gyu Lee ; Guk-Jin Kim ; In-Seon Kim ; Jin-Ho Ahn ; Jin-Goo Park, et al.
"Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction", J. Micro/Nanolith. MEMS MOEMS. 14(4), 043501 (Oct 07, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.4.043501


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